Terahertz radiation generated and detected by Br+-irradiated In0.53Ga0.47As photoconductive antenna excited at 800 nm wavelength
The authors investigate the generation and the detection of terahertz radiation by Br+-irradiated In0.53Ga0.47As photoconductive antennas using an optical excitation at 800nm wavelength. The detected temporal wave form presents a full width at half maximum of 650fs. The signal-to-noise ratio and fre...
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Veröffentlicht in: | Applied physics letters 2006, Vol.89, p.83519-1-3 |
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creator | Chimot, Nicolas Mangeney, Juliette Mounaix, Patrick Tondusson, Marc Blary, Karine Lampin, Jean-Francois |
description | The authors investigate the generation and the detection of terahertz radiation by Br+-irradiated In0.53Ga0.47As photoconductive antennas using an optical excitation at 800nm wavelength. The detected temporal wave form presents a full width at half maximum of 650fs. The signal-to-noise ratio and frequency range of the emitted terahertz radiations are similar to those emitted by low-temperature-grown GaAs photoconductive antennas. The dependences of terahertz wave form amplitude on optical pump power for both Br+-irradiated In0.53Ga0.47As and low-temperature-grown GaAs photoconductive antennas are investigated and compared. |
doi_str_mv | 10.1063/1.2338538 |
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The detected temporal wave form presents a full width at half maximum of 650fs. The signal-to-noise ratio and frequency range of the emitted terahertz radiations are similar to those emitted by low-temperature-grown GaAs photoconductive antennas. The dependences of terahertz wave form amplitude on optical pump power for both Br+-irradiated In0.53Ga0.47As and low-temperature-grown GaAs photoconductive antennas are investigated and compared.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2338538</identifier><language>eng</language><publisher>American Institute of Physics</publisher><subject>Engineering Sciences</subject><ispartof>Applied physics letters, 2006, Vol.89, p.83519-1-3</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0001-8415-6544 ; 0000-0001-8309-8178 ; 0000-0002-4354-4257</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,4010,27900,27901,27902</link.rule.ids><backlink>$$Uhttps://hal.science/hal-00162817$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Chimot, Nicolas</creatorcontrib><creatorcontrib>Mangeney, Juliette</creatorcontrib><creatorcontrib>Mounaix, Patrick</creatorcontrib><creatorcontrib>Tondusson, Marc</creatorcontrib><creatorcontrib>Blary, Karine</creatorcontrib><creatorcontrib>Lampin, Jean-Francois</creatorcontrib><title>Terahertz radiation generated and detected by Br+-irradiated In0.53Ga0.47As photoconductive antenna excited at 800 nm wavelength</title><title>Applied physics letters</title><description>The authors investigate the generation and the detection of terahertz radiation by Br+-irradiated In0.53Ga0.47As photoconductive antennas using an optical excitation at 800nm wavelength. The detected temporal wave form presents a full width at half maximum of 650fs. The signal-to-noise ratio and frequency range of the emitted terahertz radiations are similar to those emitted by low-temperature-grown GaAs photoconductive antennas. The dependences of terahertz wave form amplitude on optical pump power for both Br+-irradiated In0.53Ga0.47As and low-temperature-grown GaAs photoconductive antennas are investigated and compared.</description><subject>Engineering Sciences</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNotjMtOwzAURC0EEqWw4A-8RSjBN87DXpaKPqRKbMo6urFvGqPWqRJTKCs-nZSyGs3RmWHsHkQMIpdPECdSqkyqCzYCURSRBFCXbCSEkFGuM7hmN33_PtRsEEfsZ00dNtSFb96hdRhc6_mG_EADWY7eckuBzKlUR_7cPUauO5sDWXoRZ3KOIk6LSc_3TRta03r7YYI70LAO5D1y-jLu7y1wJQT3O_6JB9qS34Tmll3VuO3p7j_H7G32sp4uotXrfDmdrKIGlA6RSkxmtdA6JStTkSiNpkiNQlWlJLNaVgC1qoqKJNpUU6HTRNcKIc8ILBg5Zg_n3wa35b5zO-yOZYuuXExW5YkJAXmioDiA_AXbIGFd</recordid><startdate>2006</startdate><enddate>2006</enddate><creator>Chimot, Nicolas</creator><creator>Mangeney, Juliette</creator><creator>Mounaix, Patrick</creator><creator>Tondusson, Marc</creator><creator>Blary, Karine</creator><creator>Lampin, Jean-Francois</creator><general>American Institute of Physics</general><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-8415-6544</orcidid><orcidid>https://orcid.org/0000-0001-8309-8178</orcidid><orcidid>https://orcid.org/0000-0002-4354-4257</orcidid></search><sort><creationdate>2006</creationdate><title>Terahertz radiation generated and detected by Br+-irradiated In0.53Ga0.47As photoconductive antenna excited at 800 nm wavelength</title><author>Chimot, Nicolas ; Mangeney, Juliette ; Mounaix, Patrick ; Tondusson, Marc ; Blary, Karine ; Lampin, Jean-Francois</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-h189t-82c5d90994ed340289ac74c8a8b4e35f3b11f8b7be3ad49e79429f8a165e1d1c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Engineering Sciences</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chimot, Nicolas</creatorcontrib><creatorcontrib>Mangeney, Juliette</creatorcontrib><creatorcontrib>Mounaix, Patrick</creatorcontrib><creatorcontrib>Tondusson, Marc</creatorcontrib><creatorcontrib>Blary, Karine</creatorcontrib><creatorcontrib>Lampin, Jean-Francois</creatorcontrib><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chimot, Nicolas</au><au>Mangeney, Juliette</au><au>Mounaix, Patrick</au><au>Tondusson, Marc</au><au>Blary, Karine</au><au>Lampin, Jean-Francois</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Terahertz radiation generated and detected by Br+-irradiated In0.53Ga0.47As photoconductive antenna excited at 800 nm wavelength</atitle><jtitle>Applied physics letters</jtitle><date>2006</date><risdate>2006</risdate><volume>89</volume><spage>83519</spage><epage>1-3</epage><pages>83519-1-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The authors investigate the generation and the detection of terahertz radiation by Br+-irradiated In0.53Ga0.47As photoconductive antennas using an optical excitation at 800nm wavelength. The detected temporal wave form presents a full width at half maximum of 650fs. The signal-to-noise ratio and frequency range of the emitted terahertz radiations are similar to those emitted by low-temperature-grown GaAs photoconductive antennas. The dependences of terahertz wave form amplitude on optical pump power for both Br+-irradiated In0.53Ga0.47As and low-temperature-grown GaAs photoconductive antennas are investigated and compared.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2338538</doi><orcidid>https://orcid.org/0000-0001-8415-6544</orcidid><orcidid>https://orcid.org/0000-0001-8309-8178</orcidid><orcidid>https://orcid.org/0000-0002-4354-4257</orcidid></addata></record> |
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title | Terahertz radiation generated and detected by Br+-irradiated In0.53Ga0.47As photoconductive antenna excited at 800 nm wavelength |
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