Static measurements of GaN MESFETs on (111) Si substrates
For the first time, to the knowledge of the authors, GaN MESFETs on silicon substrate have been realised using low-pressure metal-organic vapour phase epitaxy. The devices demonstrate good pinch-off voltage and good breakdown voltage characteristics. A maximum extrinsic transconductance of 30 mS/mm...
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| Veröffentlicht in: | Electronics letters 2001-08, Vol.37 (17), p.1-1 |
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| container_issue | 17 |
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| container_title | Electronics letters |
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| creator | Hoël, V Guhel, Y Boudart, B Gaquière, C De Jaeger, J C Lahrèche, H Gibart, P |
| description | For the first time, to the knowledge of the authors, GaN MESFETs on silicon substrate have been realised using low-pressure metal-organic vapour phase epitaxy. The devices demonstrate good pinch-off voltage and good breakdown voltage characteristics. A maximum extrinsic transconductance of 30 mS/mm was achieved on a 100 * 0.5 μm^sup 2^ device. At a drain-to-source voltage of 30 V, the drain current density reaches 100 mA/mm at V^sub gs^ = 0V. |
| doi_str_mv | 10.1049/el:20010740 |
| format | Article |
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The devices demonstrate good pinch-off voltage and good breakdown voltage characteristics. A maximum extrinsic transconductance of 30 mS/mm was achieved on a 100 * 0.5 μm^sup 2^ device. At a drain-to-source voltage of 30 V, the drain current density reaches 100 mA/mm at V^sub gs^ = 0V.</description><identifier>ISSN: 0013-5194</identifier><identifier>EISSN: 1350-911X</identifier><identifier>DOI: 10.1049/el:20010740</identifier><identifier>CODEN: ELLEAK</identifier><language>eng</language><publisher>Stevenage: John Wiley & Sons, Inc</publisher><subject>Devices ; Drains ; Electric potential ; Gallium nitrides ; MESFETs ; Silicon substrates ; Vapour ; Voltage</subject><ispartof>Electronics letters, 2001-08, Vol.37 (17), p.1-1</ispartof><rights>Copyright The Institution of Engineering & Technology Aug 16, 2001</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c321t-525d1052f7aa1f5dd04f8c4c4884b23a343ad30779a5215d1d375fd330391a423</citedby><orcidid>0000-0003-4652-4742 ; 0000-0003-3082-2489</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27915,27916</link.rule.ids><backlink>$$Uhttps://hal.science/hal-00152620$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Hoël, V</creatorcontrib><creatorcontrib>Guhel, Y</creatorcontrib><creatorcontrib>Boudart, B</creatorcontrib><creatorcontrib>Gaquière, C</creatorcontrib><creatorcontrib>De Jaeger, J C</creatorcontrib><creatorcontrib>Lahrèche, H</creatorcontrib><creatorcontrib>Gibart, P</creatorcontrib><title>Static measurements of GaN MESFETs on (111) Si substrates</title><title>Electronics letters</title><description>For the first time, to the knowledge of the authors, GaN MESFETs on silicon substrate have been realised using low-pressure metal-organic vapour phase epitaxy. The devices demonstrate good pinch-off voltage and good breakdown voltage characteristics. A maximum extrinsic transconductance of 30 mS/mm was achieved on a 100 * 0.5 μm^sup 2^ device. At a drain-to-source voltage of 30 V, the drain current density reaches 100 mA/mm at V^sub gs^ = 0V.</description><subject>Devices</subject><subject>Drains</subject><subject>Electric potential</subject><subject>Gallium nitrides</subject><subject>MESFETs</subject><subject>Silicon substrates</subject><subject>Vapour</subject><subject>Voltage</subject><issn>0013-5194</issn><issn>1350-911X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNp9z09Lw0AQBfBFFKzVk18gIEh7iO7M7maz3kqprVD1UAVvYZpsMCV_anYj-O1dqScPnob3-DHwGLsEfgNcmltb3yHnwLXkR2wEQvHYALwds1FoRazAyFN25twuRDRGj5jZePJVHjWW3NDbxrbeRV0ZLekpelxs7hcvIbbRBACm0aaK3LB1vidv3Tk7Kal29uL3jtlr0PNVvH5ePsxn6zgXCD5WqArgCktNBKUqCi7LNJe5TFO5RUFCCioE19qQQgi2EFqVhRBcGCCJYsymh7_vVGf7vmqo_8o6qrLVbJ39dGGLwgT5JwR7fbD7vvsYrPNZU7nc1jW1thtchokxKSoZ4ORfCIlEhAQSFejVH7rrhr4Nk4NC5InGoL4BDwptdg</recordid><startdate>20010816</startdate><enddate>20010816</enddate><creator>Hoël, V</creator><creator>Guhel, Y</creator><creator>Boudart, B</creator><creator>Gaquière, C</creator><creator>De Jaeger, J C</creator><creator>Lahrèche, H</creator><creator>Gibart, P</creator><general>John Wiley & Sons, Inc</general><general>IET</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JQ2</scope><scope>K7-</scope><scope>L6V</scope><scope>M7S</scope><scope>P5Z</scope><scope>P62</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0003-4652-4742</orcidid><orcidid>https://orcid.org/0000-0003-3082-2489</orcidid></search><sort><creationdate>20010816</creationdate><title>Static measurements of GaN MESFETs on (111) Si substrates</title><author>Hoël, V ; 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The devices demonstrate good pinch-off voltage and good breakdown voltage characteristics. A maximum extrinsic transconductance of 30 mS/mm was achieved on a 100 * 0.5 μm^sup 2^ device. At a drain-to-source voltage of 30 V, the drain current density reaches 100 mA/mm at V^sub gs^ = 0V.</abstract><cop>Stevenage</cop><pub>John Wiley & Sons, Inc</pub><doi>10.1049/el:20010740</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0003-4652-4742</orcidid><orcidid>https://orcid.org/0000-0003-3082-2489</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0013-5194 |
| ispartof | Electronics letters, 2001-08, Vol.37 (17), p.1-1 |
| issn | 0013-5194 1350-911X |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_hal_00152620v1 |
| source | Alma/SFX Local Collection |
| subjects | Devices Drains Electric potential Gallium nitrides MESFETs Silicon substrates Vapour Voltage |
| title | Static measurements of GaN MESFETs on (111) Si substrates |
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