Two-dimensional hydrodynamic model including inertia effects in carrier momentum for power millimetre-wave semi-conductor devices

A two dimensional-hydrodynamic model is carried out to predict the performance of short gate length power field effect transistors based on III–V semi-conductor systems. The model is based on the conservation equations, deduced from the Boltzmann transport equation, solved in their whole form by tak...

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Veröffentlicht in:	Solid-state electronics 2003-08, Vol.47 (8), p.1297-1309
Hauptverfasser:	Rousseau, M., Delemer, J.D., De Jaeger, J.C., Dessenne, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Device modelling Energy transport model Hydrodynamic model Monte Carlo model
Online-Zugang:	Volltext
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