Surface model of formation of silicon nitride on monocrystalline silicon

We present a model for the formation of silicon nitride on monocrystalline Si(100)-(2×1) at 300K using gaseous ammonia (NH3) as nitridation reagent. FT-IR was used to identify surface species. From crystallographic and thermodynamic considerations the model shows the different steps of formation of...

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Veröffentlicht in:	Applied surface science 2002-02, Vol.187 (1-2), p.3-17
Hauptverfasser:	Sassi, Z, Chafik, K, Bureau, J.C, El Hajbi, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry Electric power Engineering Sciences Exact sciences and technology General and physical chemistry Reaction mechanism Silicon nitride Solid-gas interface Surface model Surface physical chemistry Thermal nitridation Thermodynamical computations
Online-Zugang:	Volltext
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