Structural and optical properties of vapour-etching based porous silicon

The structural and optical properties of porous silicon (PS) layers prepared by Vapour‐Etching (VE) of moderately and heavily boron‐doped Si substrates are investigated. The VE technique produces rough PS layers that are essentially formed of interconnected cluster‐like structures. Optical investiga...

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Veröffentlicht in:	Crystal research and technology (1979) 2006-02, Vol.41 (2), p.154-162
Hauptverfasser:	Kaabi, H., Mliki, N., Cheynet, M., Saikaly, W., Gilbert, O., Bessaïs, B., Yangui, B., Charaï, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical and Process Engineering Chemical Sciences Engineering Sciences Material chemistry optical properties silicon
Online-Zugang:	Volltext
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