Engineering infrared emission properties of silicon in the near field and the far field

We study numerically the thermal emission of highly doped silicon surfaces. We show that by modifying the doping, we can tune the frequency of emission. We also show that by taking advantage of the large local density of states due to surface-plasmon polaritons, radiative properties in the far field...

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Veröffentlicht in:Optics communications 2004-07, Vol.237 (4), p.379-388
Hauptverfasser: Marquier, F, Joulain, K, Mulet, J.P, Carminati, R, Greffet, J.J
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Sprache:eng
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