New sterically hindered Hf, Zr and Y β-diketonates as MOCVD precursors for oxide films
New Zr, Hf and Y 2,7,7-trimethyl-3,5-octanedionates (tod) as well as the corresponding Cu beta-diketonate were synthesised and characterised by FT-IR, elemental analyses, TGA, and 1H NMR or ESR. The molecular structure of Hf(tod)4 was determined by single-crystal XRD. The metal displays a square ant...
Gespeichert in:
Veröffentlicht in: | Journal of materials chemistry 2004-01, Vol.14 (8), p.1245-1251 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 1251 |
---|---|
container_issue | 8 |
container_start_page | 1245 |
container_title | Journal of materials chemistry |
container_volume | 14 |
creator | PASKO, Sergej V HUBERT-PFALZGRAF, Liliane G ABRUTIS, Adulfas RICHARD, Philippe BARTASYTE, Ausrine KAZLAUSKIENE, Vida |
description | New Zr, Hf and Y 2,7,7-trimethyl-3,5-octanedionates (tod) as well as the corresponding Cu beta-diketonate were synthesised and characterised by FT-IR, elemental analyses, TGA, and 1H NMR or ESR. The molecular structure of Hf(tod)4 was determined by single-crystal XRD. The metal displays a square antiprismatic geometry. Zr, Hf and Y beta-diketonates were investigated as precursors for MOCVD deposition of ZrO2, HfO2 and yttria-stabilised hafnia thin films. The films were characterised by XRD, XPS, EDS and AFM. Highly textured and in-plane oriented films were deposited on sapphire by pulsed liquid injection MOCVD. Zr(tod)4 and Hf(tod)4 precursors lead to higher growth rates of ZrO2 and HfO2 films at lower temperatures than conventional Zr(thd)4 and Hf(thd)4 precursors (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) and are attractive new precursors for oxide films. 37 refs. |
doi_str_mv | 10.1039/b401052c |
format | Article |
fullrecord | <record><control><sourceid>proquest_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_00007406v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>28310112</sourcerecordid><originalsourceid>FETCH-LOGICAL-c340t-db2829ecc5f5699f6db949ef8b9afbd080637a5df43e421ab1a9aca39f95517b3</originalsourceid><addsrcrecordid>eNpFkEtOwzAURS0EEqUgsQRPQCARsOM4iYclfIpU6ISPYBK9-KMa0rjYKdBtsRDWRKpW8CZXejo6g4PQPiWnlDBxViWEEh7LDdSjLE0izgndRD0iuIhEEufbaCeEV0IozVLeQ093-hOHVnsroa4XeGIbpb1WeGhO8IvH0Cj8jH--I2XfdOsaaHXAEPDtuHi8wDOv5dwH5wM2zmP3ZZXGxtbTsIu2DNRB7623jx6uLu-LYTQaX98Ug1EkWULaSFVxHgstJTc8FcKkqhKJ0CavBJhKkZykLAOuTMJ0ElOoKAiQwIQRnNOsYn10vPJOoC5n3k7BL0oHthwORuXyR7rLEpJ-0I49XLEz797nOrTl1Aap6xoa7eahjHNGuy5xBx6tQOldCF6bPzMl5bJyeb6qXHTowdoJoStoPDTShn-eZyzmLGO_1s17HA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28310112</pqid></control><display><type>article</type><title>New sterically hindered Hf, Zr and Y β-diketonates as MOCVD precursors for oxide films</title><source>Royal Society of Chemistry Journals Archive (1841-2007)</source><source>Royal Society Of Chemistry Journals 2008-</source><creator>PASKO, Sergej V ; HUBERT-PFALZGRAF, Liliane G ; ABRUTIS, Adulfas ; RICHARD, Philippe ; BARTASYTE, Ausrine ; KAZLAUSKIENE, Vida</creator><creatorcontrib>PASKO, Sergej V ; HUBERT-PFALZGRAF, Liliane G ; ABRUTIS, Adulfas ; RICHARD, Philippe ; BARTASYTE, Ausrine ; KAZLAUSKIENE, Vida</creatorcontrib><description>New Zr, Hf and Y 2,7,7-trimethyl-3,5-octanedionates (tod) as well as the corresponding Cu beta-diketonate were synthesised and characterised by FT-IR, elemental analyses, TGA, and 1H NMR or ESR. The molecular structure of Hf(tod)4 was determined by single-crystal XRD. The metal displays a square antiprismatic geometry. Zr, Hf and Y beta-diketonates were investigated as precursors for MOCVD deposition of ZrO2, HfO2 and yttria-stabilised hafnia thin films. The films were characterised by XRD, XPS, EDS and AFM. Highly textured and in-plane oriented films were deposited on sapphire by pulsed liquid injection MOCVD. Zr(tod)4 and Hf(tod)4 precursors lead to higher growth rates of ZrO2 and HfO2 films at lower temperatures than conventional Zr(thd)4 and Hf(thd)4 precursors (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) and are attractive new precursors for oxide films. 37 refs.</description><identifier>ISSN: 0959-9428</identifier><identifier>EISSN: 1364-5501</identifier><identifier>DOI: 10.1039/b401052c</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Catalysis ; Chemical Sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Electron paramagnetic resonance and relaxation ; Exact sciences and technology ; Magnetic resonances and relaxations in condensed matter, mössbauer effect ; Materials science ; Nuclear magnetic resonance and relaxation ; Physics</subject><ispartof>Journal of materials chemistry, 2004-01, Vol.14 (8), p.1245-1251</ispartof><rights>2006 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c340t-db2829ecc5f5699f6db949ef8b9afbd080637a5df43e421ab1a9aca39f95517b3</citedby><cites>FETCH-LOGICAL-c340t-db2829ecc5f5699f6db949ef8b9afbd080637a5df43e421ab1a9aca39f95517b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,315,781,785,886,2832,27928,27929</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15732537$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-00007406$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>PASKO, Sergej V</creatorcontrib><creatorcontrib>HUBERT-PFALZGRAF, Liliane G</creatorcontrib><creatorcontrib>ABRUTIS, Adulfas</creatorcontrib><creatorcontrib>RICHARD, Philippe</creatorcontrib><creatorcontrib>BARTASYTE, Ausrine</creatorcontrib><creatorcontrib>KAZLAUSKIENE, Vida</creatorcontrib><title>New sterically hindered Hf, Zr and Y β-diketonates as MOCVD precursors for oxide films</title><title>Journal of materials chemistry</title><description>New Zr, Hf and Y 2,7,7-trimethyl-3,5-octanedionates (tod) as well as the corresponding Cu beta-diketonate were synthesised and characterised by FT-IR, elemental analyses, TGA, and 1H NMR or ESR. The molecular structure of Hf(tod)4 was determined by single-crystal XRD. The metal displays a square antiprismatic geometry. Zr, Hf and Y beta-diketonates were investigated as precursors for MOCVD deposition of ZrO2, HfO2 and yttria-stabilised hafnia thin films. The films were characterised by XRD, XPS, EDS and AFM. Highly textured and in-plane oriented films were deposited on sapphire by pulsed liquid injection MOCVD. Zr(tod)4 and Hf(tod)4 precursors lead to higher growth rates of ZrO2 and HfO2 films at lower temperatures than conventional Zr(thd)4 and Hf(thd)4 precursors (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) and are attractive new precursors for oxide films. 37 refs.</description><subject>Catalysis</subject><subject>Chemical Sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electron paramagnetic resonance and relaxation</subject><subject>Exact sciences and technology</subject><subject>Magnetic resonances and relaxations in condensed matter, mössbauer effect</subject><subject>Materials science</subject><subject>Nuclear magnetic resonance and relaxation</subject><subject>Physics</subject><issn>0959-9428</issn><issn>1364-5501</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNpFkEtOwzAURS0EEqUgsQRPQCARsOM4iYclfIpU6ISPYBK9-KMa0rjYKdBtsRDWRKpW8CZXejo6g4PQPiWnlDBxViWEEh7LDdSjLE0izgndRD0iuIhEEufbaCeEV0IozVLeQ093-hOHVnsroa4XeGIbpb1WeGhO8IvH0Cj8jH--I2XfdOsaaHXAEPDtuHi8wDOv5dwH5wM2zmP3ZZXGxtbTsIu2DNRB7623jx6uLu-LYTQaX98Ug1EkWULaSFVxHgstJTc8FcKkqhKJ0CavBJhKkZykLAOuTMJ0ElOoKAiQwIQRnNOsYn10vPJOoC5n3k7BL0oHthwORuXyR7rLEpJ-0I49XLEz797nOrTl1Aap6xoa7eahjHNGuy5xBx6tQOldCF6bPzMl5bJyeb6qXHTowdoJoStoPDTShn-eZyzmLGO_1s17HA</recordid><startdate>20040101</startdate><enddate>20040101</enddate><creator>PASKO, Sergej V</creator><creator>HUBERT-PFALZGRAF, Liliane G</creator><creator>ABRUTIS, Adulfas</creator><creator>RICHARD, Philippe</creator><creator>BARTASYTE, Ausrine</creator><creator>KAZLAUSKIENE, Vida</creator><general>Royal Society of Chemistry</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope><scope>1XC</scope></search><sort><creationdate>20040101</creationdate><title>New sterically hindered Hf, Zr and Y β-diketonates as MOCVD precursors for oxide films</title><author>PASKO, Sergej V ; HUBERT-PFALZGRAF, Liliane G ; ABRUTIS, Adulfas ; RICHARD, Philippe ; BARTASYTE, Ausrine ; KAZLAUSKIENE, Vida</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-db2829ecc5f5699f6db949ef8b9afbd080637a5df43e421ab1a9aca39f95517b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Catalysis</topic><topic>Chemical Sciences</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electron paramagnetic resonance and relaxation</topic><topic>Exact sciences and technology</topic><topic>Magnetic resonances and relaxations in condensed matter, mössbauer effect</topic><topic>Materials science</topic><topic>Nuclear magnetic resonance and relaxation</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>PASKO, Sergej V</creatorcontrib><creatorcontrib>HUBERT-PFALZGRAF, Liliane G</creatorcontrib><creatorcontrib>ABRUTIS, Adulfas</creatorcontrib><creatorcontrib>RICHARD, Philippe</creatorcontrib><creatorcontrib>BARTASYTE, Ausrine</creatorcontrib><creatorcontrib>KAZLAUSKIENE, Vida</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of materials chemistry</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>PASKO, Sergej V</au><au>HUBERT-PFALZGRAF, Liliane G</au><au>ABRUTIS, Adulfas</au><au>RICHARD, Philippe</au><au>BARTASYTE, Ausrine</au><au>KAZLAUSKIENE, Vida</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>New sterically hindered Hf, Zr and Y β-diketonates as MOCVD precursors for oxide films</atitle><jtitle>Journal of materials chemistry</jtitle><date>2004-01-01</date><risdate>2004</risdate><volume>14</volume><issue>8</issue><spage>1245</spage><epage>1251</epage><pages>1245-1251</pages><issn>0959-9428</issn><eissn>1364-5501</eissn><abstract>New Zr, Hf and Y 2,7,7-trimethyl-3,5-octanedionates (tod) as well as the corresponding Cu beta-diketonate were synthesised and characterised by FT-IR, elemental analyses, TGA, and 1H NMR or ESR. The molecular structure of Hf(tod)4 was determined by single-crystal XRD. The metal displays a square antiprismatic geometry. Zr, Hf and Y beta-diketonates were investigated as precursors for MOCVD deposition of ZrO2, HfO2 and yttria-stabilised hafnia thin films. The films were characterised by XRD, XPS, EDS and AFM. Highly textured and in-plane oriented films were deposited on sapphire by pulsed liquid injection MOCVD. Zr(tod)4 and Hf(tod)4 precursors lead to higher growth rates of ZrO2 and HfO2 films at lower temperatures than conventional Zr(thd)4 and Hf(thd)4 precursors (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) and are attractive new precursors for oxide films. 37 refs.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/b401052c</doi><tpages>7</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0959-9428 |
ispartof | Journal of materials chemistry, 2004-01, Vol.14 (8), p.1245-1251 |
issn | 0959-9428 1364-5501 |
language | eng |
recordid | cdi_hal_primary_oai_HAL_hal_00007406v1 |
source | Royal Society of Chemistry Journals Archive (1841-2007); Royal Society Of Chemistry Journals 2008- |
subjects | Catalysis Chemical Sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electron paramagnetic resonance and relaxation Exact sciences and technology Magnetic resonances and relaxations in condensed matter, mössbauer effect Materials science Nuclear magnetic resonance and relaxation Physics |
title | New sterically hindered Hf, Zr and Y β-diketonates as MOCVD precursors for oxide films |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T05%3A22%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=New%20sterically%20hindered%20Hf,%20Zr%20and%20Y%20%CE%B2-diketonates%20as%20MOCVD%20precursors%20for%20oxide%20films&rft.jtitle=Journal%20of%20materials%20chemistry&rft.au=PASKO,%20Sergej%20V&rft.date=2004-01-01&rft.volume=14&rft.issue=8&rft.spage=1245&rft.epage=1251&rft.pages=1245-1251&rft.issn=0959-9428&rft.eissn=1364-5501&rft_id=info:doi/10.1039/b401052c&rft_dat=%3Cproquest_hal_p%3E28310112%3C/proquest_hal_p%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28310112&rft_id=info:pmid/&rfr_iscdi=true |