Identification of the Carbon Dangling Bond Center at the 4H-SiC=SiO2 Interface by an EPR Study in Oxidized Porous SiC

We report the observation of a paramagnetic interface defect in thermally oxidized porous n-type doped 4H–SiC/SiO2. Based on its axial symmetry and resolved hyperfine interactions it is attributed to an sp3 carbon dangling bond center situated at the SiC side of the interface. This center is electri...

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Veröffentlicht in:	Physical review letters 2004-01, Vol.92
Hauptverfasser:	Cantin, Jean-Louis, von Bardeleben, J., Shishkin, Y., Ke, Y., P. Devaty, R., J. Choyke, W.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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