ALD-grown tin oxide as an electron selective layer for perovskite/silicon tandem cells

This work presents a comparative study between tin(IV) oxide (SnO2) thin films deposited by spin coating or Atomic Layer Deposition (ALD) to be used as an electron selective layer (ESL) in perovskite/silicon tandem solar cells. This study is motivated by the usually lower performances of ESL made of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Gayot, Félix, Bruhat, Elise, Manceau, Matthieu, De Vito, Eric, Mariolle, Denis, Nguyen, Nathalie, Cros, Stéphane
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Atomic layer epitaxy Comparative studies Electric power Electronics Engineering Sciences Optical properties Perovskites Photovoltaic cells Silicon Solar cells Spin coating Thin films Tin dioxide Tin oxides
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!