Cradle-to-Gate Life Cycle Assessment (LCA) of GaN Power Semiconductor Device
Wide Band Gap (WBG) semiconductors have the potential to provide significant improvements in energy efficiency over conventional silicon (Si) semiconductors. While the potential for energy efficiency gains is widely researched, the relation to the energy and resource use during manufacturing process...
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| Veröffentlicht in: | Global sustainability 2024-01, Vol.16 (2), p.901 |
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| creator | Vauche, Laura Guillemaud, Gabin Lopes Barbosa, Joao-Carlos Di Cioccio, Léa |
| description | Wide Band Gap (WBG) semiconductors have the potential to provide significant improvements in energy efficiency over conventional silicon (Si) semiconductors. While the potential for energy efficiency gains is widely researched, the relation to the energy and resource use during manufacturing processes remains insufficiently studied. In order to appraise the performance of the technology thoroughly, issues such as raw material scarcity, toxicity and environmental impacts need to be investigated in detail. However, sparse Life Cycle Assessment (LCA) data are available for the two currently most widespread WBG semiconductor materials, gallium nitride (GaN or GaN/Si) and silicon carbide (SiC). This paper, for the first time, presents a cradle-to-gate life cycle assessment for a GaN/Si power device. To allow for a full range of indicators, life cycle assessment method EF 3.1 was used to analyze the results. The results identify environmental hotspots associated with different materials and processes: electricity consumption for the processes and clean room facilities, direct emissions of greenhouse gases, gold (when used), and volatile organic chemicals. Finally, we compare this result with publicly available data for Si, GaN and SiC power devices. |
| doi_str_mv | 10.3390/su16020901 |
| format | Article |
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While the potential for energy efficiency gains is widely researched, the relation to the energy and resource use during manufacturing processes remains insufficiently studied. In order to appraise the performance of the technology thoroughly, issues such as raw material scarcity, toxicity and environmental impacts need to be investigated in detail. However, sparse Life Cycle Assessment (LCA) data are available for the two currently most widespread WBG semiconductor materials, gallium nitride (GaN or GaN/Si) and silicon carbide (SiC). This paper, for the first time, presents a cradle-to-gate life cycle assessment for a GaN/Si power device. To allow for a full range of indicators, life cycle assessment method EF 3.1 was used to analyze the results. The results identify environmental hotspots associated with different materials and processes: electricity consumption for the processes and clean room facilities, direct emissions of greenhouse gases, gold (when used), and volatile organic chemicals. 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While the potential for energy efficiency gains is widely researched, the relation to the energy and resource use during manufacturing processes remains insufficiently studied. In order to appraise the performance of the technology thoroughly, issues such as raw material scarcity, toxicity and environmental impacts need to be investigated in detail. However, sparse Life Cycle Assessment (LCA) data are available for the two currently most widespread WBG semiconductor materials, gallium nitride (GaN or GaN/Si) and silicon carbide (SiC). This paper, for the first time, presents a cradle-to-gate life cycle assessment for a GaN/Si power device. To allow for a full range of indicators, life cycle assessment method EF 3.1 was used to analyze the results. 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| source | Cambridge Journals Open Access; DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; MDPI - Multidisciplinary Digital Publishing Institute |
| subjects | Air pollution Chemical vapor deposition Emissions Energy efficiency Energy management systems Engineering Sciences Gallium nitrate Greenhouse gases Manufacturing Marketing research Micro and nanotechnologies Microelectronics Nitrides Nuclear energy Raw materials Semiconductors Silicon Silicon compounds Volatile organic compounds |
| title | Cradle-to-Gate Life Cycle Assessment (LCA) of GaN Power Semiconductor Device |
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