PbOx phase separation in PbZr0.52Ti0.48O3 based capacitors made using sol-gel films with high Pb precursor excess

We present a study of the impact of Pb excess content on electrical performance of lead zirconate titanate (PbZr0.52Ti0.48O3, PZT) thin-film capacitors. High Pb excess eliminates the ZrOx interface layer between the PZT and the electrode but also reduces the breakdown field, while the linear dielect...

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Veröffentlicht in:Applied physics letters 2022-06, Vol.120 (24)
Hauptverfasser: Gueye, Ibrahima, Le Rhun, Gwenael, Renault, Olivier, Pierre, Francois, Defay, Emmanuel, Barrett, Nicholas
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container_issue 24
container_start_page
container_title Applied physics letters
container_volume 120
creator Gueye, Ibrahima
Le Rhun, Gwenael
Renault, Olivier
Pierre, Francois
Defay, Emmanuel
Barrett, Nicholas
description We present a study of the impact of Pb excess content on electrical performance of lead zirconate titanate (PbZr0.52Ti0.48O3, PZT) thin-film capacitors. High Pb excess eliminates the ZrOx interface layer between the PZT and the electrode but also reduces the breakdown field, while the linear dielectric character of the capacitor response increases with Pb excess. The chemical sensitivity of hard x-ray photoelectron spectroscopy with in situ bias provides direct evidence of a polar but the non-ferroelectric PbOx phase in the bulk of the sol-gel film. The phase has a distinct core level signature and is consistent with the dielectric response at low field, which becomes more ferroelectric at higher field, as well as the lower remanent polarization and breakdown field.
doi_str_mv 10.1063/5.0090016
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fullrecord <record><control><sourceid>proquest_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_cea_04459848v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2676320496</sourcerecordid><originalsourceid>FETCH-LOGICAL-c166f-73ac35b82fdbe6d846e0586d78d2c33406b3b899db796829b52673d14860185e3</originalsourceid><addsrcrecordid>eNp90M1LwzAYx_EgCs6Xg_9BwJNC55OmSdOjDHXCYDvMi5eQt66RbqnJNud_b3WiB8FTCHz48vBD6ILAkACnN2wIUAEQfoAGBMoyo4SIQzQAAJrxipFjdJLSS_9lOaUD9DrT0x3uGpUcTq5TUa19WGG_wjP9HGHI8rmHYSGmFOveWGxUp4xfh5jwUlmHN8mvFjiFNlu4Fte-XSb85tcNbvyi6SO4i85sYgoRu51xKZ2ho1q1yZ1_v6fo6f5uPhpnk-nD4-h2khnCeZ2VVBnKtMhrqx23ouAOmOC2FDY3lBbANdWiqqwuKy7ySrOcl9SSQnAggjl6iq723Ua1sot-qeK7DMrL8e1EGqckFAWrRCG2pLeXe9vF8LpxaS1fwiau-vNkX-U0h6Liv0UTQ0rR1T9ZAvJzfcnk9_q9vd7b1I_1tekP3ob4C2Vn6__w3_IHkIqPlA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2676320496</pqid></control><display><type>article</type><title>PbOx phase separation in PbZr0.52Ti0.48O3 based capacitors made using sol-gel films with high Pb precursor excess</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Gueye, Ibrahima ; Le Rhun, Gwenael ; Renault, Olivier ; Pierre, Francois ; Defay, Emmanuel ; Barrett, Nicholas</creator><creatorcontrib>Gueye, Ibrahima ; Le Rhun, Gwenael ; Renault, Olivier ; Pierre, Francois ; Defay, Emmanuel ; Barrett, Nicholas</creatorcontrib><description>We present a study of the impact of Pb excess content on electrical performance of lead zirconate titanate (PbZr0.52Ti0.48O3, PZT) thin-film capacitors. High Pb excess eliminates the ZrOx interface layer between the PZT and the electrode but also reduces the breakdown field, while the linear dielectric character of the capacitor response increases with Pb excess. The chemical sensitivity of hard x-ray photoelectron spectroscopy with in situ bias provides direct evidence of a polar but the non-ferroelectric PbOx phase in the bulk of the sol-gel film. The phase has a distinct core level signature and is consistent with the dielectric response at low field, which becomes more ferroelectric at higher field, as well as the lower remanent polarization and breakdown field.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0090016</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Capacitors ; Dielectric breakdown ; Ferroelectric materials ; Ferroelectricity ; Lead zirconate titanates ; Phase separation ; Photoelectrons ; Physics ; Sol-gel processes ; Thin films</subject><ispartof>Applied physics letters, 2022-06, Vol.120 (24)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). Published under an exclusive license by AIP Publishing.</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c166f-73ac35b82fdbe6d846e0586d78d2c33406b3b899db796829b52673d14860185e3</cites><orcidid>0000-0003-1462-8969 ; 0000-0002-0683-9590 ; 0000-0002-3021-3010 ; 0000-0002-8228-0805 ; 0000-0001-5296-3894 ; 0000-0002-4373-0041</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0090016$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,4512,27924,27925,76384</link.rule.ids><backlink>$$Uhttps://cea.hal.science/cea-04459848$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Gueye, Ibrahima</creatorcontrib><creatorcontrib>Le Rhun, Gwenael</creatorcontrib><creatorcontrib>Renault, Olivier</creatorcontrib><creatorcontrib>Pierre, Francois</creatorcontrib><creatorcontrib>Defay, Emmanuel</creatorcontrib><creatorcontrib>Barrett, Nicholas</creatorcontrib><title>PbOx phase separation in PbZr0.52Ti0.48O3 based capacitors made using sol-gel films with high Pb precursor excess</title><title>Applied physics letters</title><description>We present a study of the impact of Pb excess content on electrical performance of lead zirconate titanate (PbZr0.52Ti0.48O3, PZT) thin-film capacitors. High Pb excess eliminates the ZrOx interface layer between the PZT and the electrode but also reduces the breakdown field, while the linear dielectric character of the capacitor response increases with Pb excess. The chemical sensitivity of hard x-ray photoelectron spectroscopy with in situ bias provides direct evidence of a polar but the non-ferroelectric PbOx phase in the bulk of the sol-gel film. The phase has a distinct core level signature and is consistent with the dielectric response at low field, which becomes more ferroelectric at higher field, as well as the lower remanent polarization and breakdown field.</description><subject>Applied physics</subject><subject>Capacitors</subject><subject>Dielectric breakdown</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Lead zirconate titanates</subject><subject>Phase separation</subject><subject>Photoelectrons</subject><subject>Physics</subject><subject>Sol-gel processes</subject><subject>Thin films</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp90M1LwzAYx_EgCs6Xg_9BwJNC55OmSdOjDHXCYDvMi5eQt66RbqnJNud_b3WiB8FTCHz48vBD6ILAkACnN2wIUAEQfoAGBMoyo4SIQzQAAJrxipFjdJLSS_9lOaUD9DrT0x3uGpUcTq5TUa19WGG_wjP9HGHI8rmHYSGmFOveWGxUp4xfh5jwUlmHN8mvFjiFNlu4Fte-XSb85tcNbvyi6SO4i85sYgoRu51xKZ2ho1q1yZ1_v6fo6f5uPhpnk-nD4-h2khnCeZ2VVBnKtMhrqx23ouAOmOC2FDY3lBbANdWiqqwuKy7ySrOcl9SSQnAggjl6iq723Ua1sot-qeK7DMrL8e1EGqckFAWrRCG2pLeXe9vF8LpxaS1fwiau-vNkX-U0h6Liv0UTQ0rR1T9ZAvJzfcnk9_q9vd7b1I_1tekP3ob4C2Vn6__w3_IHkIqPlA</recordid><startdate>20220613</startdate><enddate>20220613</enddate><creator>Gueye, Ibrahima</creator><creator>Le Rhun, Gwenael</creator><creator>Renault, Olivier</creator><creator>Pierre, Francois</creator><creator>Defay, Emmanuel</creator><creator>Barrett, Nicholas</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0003-1462-8969</orcidid><orcidid>https://orcid.org/0000-0002-0683-9590</orcidid><orcidid>https://orcid.org/0000-0002-3021-3010</orcidid><orcidid>https://orcid.org/0000-0002-8228-0805</orcidid><orcidid>https://orcid.org/0000-0001-5296-3894</orcidid><orcidid>https://orcid.org/0000-0002-4373-0041</orcidid></search><sort><creationdate>20220613</creationdate><title>PbOx phase separation in PbZr0.52Ti0.48O3 based capacitors made using sol-gel films with high Pb precursor excess</title><author>Gueye, Ibrahima ; Le Rhun, Gwenael ; Renault, Olivier ; Pierre, Francois ; Defay, Emmanuel ; Barrett, Nicholas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c166f-73ac35b82fdbe6d846e0586d78d2c33406b3b899db796829b52673d14860185e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Applied physics</topic><topic>Capacitors</topic><topic>Dielectric breakdown</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Lead zirconate titanates</topic><topic>Phase separation</topic><topic>Photoelectrons</topic><topic>Physics</topic><topic>Sol-gel processes</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gueye, Ibrahima</creatorcontrib><creatorcontrib>Le Rhun, Gwenael</creatorcontrib><creatorcontrib>Renault, Olivier</creatorcontrib><creatorcontrib>Pierre, Francois</creatorcontrib><creatorcontrib>Defay, Emmanuel</creatorcontrib><creatorcontrib>Barrett, Nicholas</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gueye, Ibrahima</au><au>Le Rhun, Gwenael</au><au>Renault, Olivier</au><au>Pierre, Francois</au><au>Defay, Emmanuel</au><au>Barrett, Nicholas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>PbOx phase separation in PbZr0.52Ti0.48O3 based capacitors made using sol-gel films with high Pb precursor excess</atitle><jtitle>Applied physics letters</jtitle><date>2022-06-13</date><risdate>2022</risdate><volume>120</volume><issue>24</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We present a study of the impact of Pb excess content on electrical performance of lead zirconate titanate (PbZr0.52Ti0.48O3, PZT) thin-film capacitors. High Pb excess eliminates the ZrOx interface layer between the PZT and the electrode but also reduces the breakdown field, while the linear dielectric character of the capacitor response increases with Pb excess. The chemical sensitivity of hard x-ray photoelectron spectroscopy with in situ bias provides direct evidence of a polar but the non-ferroelectric PbOx phase in the bulk of the sol-gel film. The phase has a distinct core level signature and is consistent with the dielectric response at low field, which becomes more ferroelectric at higher field, as well as the lower remanent polarization and breakdown field.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0090016</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-1462-8969</orcidid><orcidid>https://orcid.org/0000-0002-0683-9590</orcidid><orcidid>https://orcid.org/0000-0002-3021-3010</orcidid><orcidid>https://orcid.org/0000-0002-8228-0805</orcidid><orcidid>https://orcid.org/0000-0001-5296-3894</orcidid><orcidid>https://orcid.org/0000-0002-4373-0041</orcidid></addata></record>
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source AIP Journals Complete; Alma/SFX Local Collection
subjects Applied physics
Capacitors
Dielectric breakdown
Ferroelectric materials
Ferroelectricity
Lead zirconate titanates
Phase separation
Photoelectrons
Physics
Sol-gel processes
Thin films
title PbOx phase separation in PbZr0.52Ti0.48O3 based capacitors made using sol-gel films with high Pb precursor excess
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T12%3A00%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=PbOx%20phase%20separation%20in%20PbZr0.52Ti0.48O3%20based%20capacitors%20made%20using%20sol-gel%20films%20with%20high%20Pb%20precursor%20excess&rft.jtitle=Applied%20physics%20letters&rft.au=Gueye,%20Ibrahima&rft.date=2022-06-13&rft.volume=120&rft.issue=24&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/5.0090016&rft_dat=%3Cproquest_hal_p%3E2676320496%3C/proquest_hal_p%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2676320496&rft_id=info:pmid/&rfr_iscdi=true