PbOx phase separation in PbZr0.52Ti0.48O3 based capacitors made using sol-gel films with high Pb precursor excess
We present a study of the impact of Pb excess content on electrical performance of lead zirconate titanate (PbZr0.52Ti0.48O3, PZT) thin-film capacitors. High Pb excess eliminates the ZrOx interface layer between the PZT and the electrode but also reduces the breakdown field, while the linear dielect...
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Veröffentlicht in: | Applied physics letters 2022-06, Vol.120 (24) |
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creator | Gueye, Ibrahima Le Rhun, Gwenael Renault, Olivier Pierre, Francois Defay, Emmanuel Barrett, Nicholas |
description | We present a study of the impact of Pb excess content on electrical performance of lead zirconate titanate (PbZr0.52Ti0.48O3, PZT) thin-film capacitors. High Pb excess eliminates the ZrOx interface layer between the PZT and the electrode but also reduces the breakdown field, while the linear dielectric character of the capacitor response increases with Pb excess. The chemical sensitivity of hard x-ray photoelectron spectroscopy with in situ bias provides direct evidence of a polar but the non-ferroelectric PbOx phase in the bulk of the sol-gel film. The phase has a distinct core level signature and is consistent with the dielectric response at low field, which becomes more ferroelectric at higher field, as well as the lower remanent polarization and breakdown field. |
doi_str_mv | 10.1063/5.0090016 |
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High Pb excess eliminates the ZrOx interface layer between the PZT and the electrode but also reduces the breakdown field, while the linear dielectric character of the capacitor response increases with Pb excess. The chemical sensitivity of hard x-ray photoelectron spectroscopy with in situ bias provides direct evidence of a polar but the non-ferroelectric PbOx phase in the bulk of the sol-gel film. 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High Pb excess eliminates the ZrOx interface layer between the PZT and the electrode but also reduces the breakdown field, while the linear dielectric character of the capacitor response increases with Pb excess. The chemical sensitivity of hard x-ray photoelectron spectroscopy with in situ bias provides direct evidence of a polar but the non-ferroelectric PbOx phase in the bulk of the sol-gel film. The phase has a distinct core level signature and is consistent with the dielectric response at low field, which becomes more ferroelectric at higher field, as well as the lower remanent polarization and breakdown field.</description><subject>Applied physics</subject><subject>Capacitors</subject><subject>Dielectric breakdown</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Lead zirconate titanates</subject><subject>Phase separation</subject><subject>Photoelectrons</subject><subject>Physics</subject><subject>Sol-gel processes</subject><subject>Thin films</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp90M1LwzAYx_EgCs6Xg_9BwJNC55OmSdOjDHXCYDvMi5eQt66RbqnJNud_b3WiB8FTCHz48vBD6ILAkACnN2wIUAEQfoAGBMoyo4SIQzQAAJrxipFjdJLSS_9lOaUD9DrT0x3uGpUcTq5TUa19WGG_wjP9HGHI8rmHYSGmFOveWGxUp4xfh5jwUlmHN8mvFjiFNlu4Fte-XSb85tcNbvyi6SO4i85sYgoRu51xKZ2ho1q1yZ1_v6fo6f5uPhpnk-nD4-h2khnCeZ2VVBnKtMhrqx23ouAOmOC2FDY3lBbANdWiqqwuKy7ySrOcl9SSQnAggjl6iq723Ua1sot-qeK7DMrL8e1EGqckFAWrRCG2pLeXe9vF8LpxaS1fwiau-vNkX-U0h6Liv0UTQ0rR1T9ZAvJzfcnk9_q9vd7b1I_1tekP3ob4C2Vn6__w3_IHkIqPlA</recordid><startdate>20220613</startdate><enddate>20220613</enddate><creator>Gueye, Ibrahima</creator><creator>Le Rhun, Gwenael</creator><creator>Renault, Olivier</creator><creator>Pierre, Francois</creator><creator>Defay, Emmanuel</creator><creator>Barrett, Nicholas</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0003-1462-8969</orcidid><orcidid>https://orcid.org/0000-0002-0683-9590</orcidid><orcidid>https://orcid.org/0000-0002-3021-3010</orcidid><orcidid>https://orcid.org/0000-0002-8228-0805</orcidid><orcidid>https://orcid.org/0000-0001-5296-3894</orcidid><orcidid>https://orcid.org/0000-0002-4373-0041</orcidid></search><sort><creationdate>20220613</creationdate><title>PbOx phase separation in PbZr0.52Ti0.48O3 based capacitors made using sol-gel films with high Pb precursor excess</title><author>Gueye, Ibrahima ; Le Rhun, Gwenael ; Renault, Olivier ; Pierre, Francois ; Defay, Emmanuel ; Barrett, Nicholas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c166f-73ac35b82fdbe6d846e0586d78d2c33406b3b899db796829b52673d14860185e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Applied physics</topic><topic>Capacitors</topic><topic>Dielectric breakdown</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Lead zirconate titanates</topic><topic>Phase separation</topic><topic>Photoelectrons</topic><topic>Physics</topic><topic>Sol-gel processes</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gueye, Ibrahima</creatorcontrib><creatorcontrib>Le Rhun, Gwenael</creatorcontrib><creatorcontrib>Renault, Olivier</creatorcontrib><creatorcontrib>Pierre, Francois</creatorcontrib><creatorcontrib>Defay, Emmanuel</creatorcontrib><creatorcontrib>Barrett, Nicholas</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gueye, Ibrahima</au><au>Le Rhun, Gwenael</au><au>Renault, Olivier</au><au>Pierre, Francois</au><au>Defay, Emmanuel</au><au>Barrett, Nicholas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>PbOx phase separation in PbZr0.52Ti0.48O3 based capacitors made using sol-gel films with high Pb precursor excess</atitle><jtitle>Applied physics letters</jtitle><date>2022-06-13</date><risdate>2022</risdate><volume>120</volume><issue>24</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We present a study of the impact of Pb excess content on electrical performance of lead zirconate titanate (PbZr0.52Ti0.48O3, PZT) thin-film capacitors. High Pb excess eliminates the ZrOx interface layer between the PZT and the electrode but also reduces the breakdown field, while the linear dielectric character of the capacitor response increases with Pb excess. The chemical sensitivity of hard x-ray photoelectron spectroscopy with in situ bias provides direct evidence of a polar but the non-ferroelectric PbOx phase in the bulk of the sol-gel film. 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subjects | Applied physics Capacitors Dielectric breakdown Ferroelectric materials Ferroelectricity Lead zirconate titanates Phase separation Photoelectrons Physics Sol-gel processes Thin films |
title | PbOx phase separation in PbZr0.52Ti0.48O3 based capacitors made using sol-gel films with high Pb precursor excess |
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