Taming the resistive switching in Fe/MgO/V/Fe magnetic tunnel junctions: An ab initio study

A possible mechanism for the resistive switching observed experimentally in Fe/MgO/V/Fe junctions is presented. Ab initio total energy calculations within the local density approximation and pseudopotential theory shows that by moving the oxygen ions across the MgO/V interface one obtains a metastab...

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Veröffentlicht in:	Journal of magnetism and magnetic materials 2014-12, Vol.372, p.167-172
Hauptverfasser:	Aguiar-Hualde, J.M., Alouani, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Ab initio Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductance Density Electric fields Electrical junctions Electronic transport in condensed matter Exact sciences and technology Fe/MgO Ground state LDA Magnesium oxide Magnetic tunnel junction Magnetoresistance Mathematical analysis Metastable state Physics Siesta Smeagol Spin polarized transport Switching
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