A comparative structural investigation of GaN implanted with rare earth ions at room temperature and 500 °C

The crystallographic damage induced in GaN by 300 keV rare earth ions implantation has been investigated as a function of the implantation temperature. The defect structure of GaN thin films implanted at 500 °C with Eu or Er ions with fluences ranging between 1 × 10 15 and 2 × 10 16 at./cm 2 has bee...

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Veröffentlicht in:	Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2008, Vol.146 (1), p.204-207
Hauptverfasser:	Gloux, F., Ruterana, P., Lorenz, K., Alves, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter GaN Ion implantation Materials Science Physics Rare earth Structural defects Transmission electron microscopy
Online-Zugang:	Volltext
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