Shuffling atomic layer deposition gas sequences to modulate bimetallic thin films and nanoparticle properties

Atomic layer deposition (ALD) typically employs metal precursor and co-reactant pulses to deposit thin films in a layer-by-layer fashion. While conventional ABAB-type ALD sequences implement only two functionalities, namely a metal source and ligand exchange agent, additional functionalities have em...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Filez, Matthias, Feng, Ji-Yu, Minjauw, Matthias, Solano Minuesa, Eduardo, Poonkottil, Nithin, Van Daele, Michiel, Karuparambil Ramachandran, Ranjith, Li, Chen, Bals, Sara, Poelman, Hilde, Detavernier, Christophe, Dendooven, Jolien
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!