Germanium doping of Si substrates for improved device characteristics and yield

During the last decade the 300 mm Si wafer has been optimized and one is already studying 450 mm crystals and wafers. The increasing silicon crystal diameter shows two important trends with respect to substrate characteristics: the interstitial oxygen concentration is decreasing while the size of gr...

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Bibliographische Detailangaben

Hauptverfasser:	Vanhellemont, Jan, Chen, Jiahe, Xu, Wubing, Yang, Deren, Rafi, Joan Marc, Ohyama, Hidenori, Simoen, Eddy
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CRYSTALS CZ SILICON CZOCHRALSKI SILICON DEFECTS DEGRADATION DEPENDENCE GROWTH Physics and Astronomy SI1-XGEX EPITAXIAL DEVICES
Online-Zugang:	Volltext
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