Microstructure Evolution of the Interface in SiC[sub.f]/TiC-Ti[sub.3]SiC[sub.2] Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process
A new type of SiC[sub.f] /TiC-Ti[sub.3] SiC[sub.2] composite was prepared by the Spark Plasma Sintering (SPS) method in this work. The phase transformation and interface cracking of this composite under ion irradiation (single Xe, Xe + He, and Xe + He + H ions) and subsequent annealing were analyzed...
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| Veröffentlicht in: | Nanomaterials (Basel, Switzerland) Switzerland), 2024-10, Vol.14 (20) |
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| container_title | Nanomaterials (Basel, Switzerland) |
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| creator | Lei, Penghui Chang, Qing Xiao, Mingkun Ye, Chao Qi, Pan Shi, Fangjie Hang, Yuhua Li, Qianwu Peng, Qing |
| description | A new type of SiC[sub.f] /TiC-Ti[sub.3] SiC[sub.2] composite was prepared by the Spark Plasma Sintering (SPS) method in this work. The phase transformation and interface cracking of this composite under ion irradiation (single Xe, Xe + He, and Xe + He + H ions) and subsequent annealing were analyzed using transmission electron microscopy (TEM), mainly focusing on the interface regions. Xe ion irradiation resulted in the formation of high-density stacking faults in the TiC coatings and the complete amorphization of SiC fibers. The implanted H ions exacerbated interface coarsening. After annealing at 900 °C for 2 h, the interface in the Xe + He + H ion-irradiated samples was seriously damaged, resulting in the formation of large bubbles and cracks. This damage occurred because the H atoms reduced the surface free energy, thereby promoting the nucleation and growth of bubbles. Due to the absorption effect of the SiC[sub.f] /TiC interface on defects, the SiC fiber areas near the interface recovered back to the initial nano-polycrystalline structure after annealing. |
| doi_str_mv | 10.3390/nano14201629 |
| format | Article |
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The phase transformation and interface cracking of this composite under ion irradiation (single Xe, Xe + He, and Xe + He + H ions) and subsequent annealing were analyzed using transmission electron microscopy (TEM), mainly focusing on the interface regions. Xe ion irradiation resulted in the formation of high-density stacking faults in the TiC coatings and the complete amorphization of SiC fibers. The implanted H ions exacerbated interface coarsening. After annealing at 900 °C for 2 h, the interface in the Xe + He + H ion-irradiated samples was seriously damaged, resulting in the formation of large bubbles and cracks. This damage occurred because the H atoms reduced the surface free energy, thereby promoting the nucleation and growth of bubbles. 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The phase transformation and interface cracking of this composite under ion irradiation (single Xe, Xe + He, and Xe + He + H ions) and subsequent annealing were analyzed using transmission electron microscopy (TEM), mainly focusing on the interface regions. Xe ion irradiation resulted in the formation of high-density stacking faults in the TiC coatings and the complete amorphization of SiC fibers. The implanted H ions exacerbated interface coarsening. After annealing at 900 °C for 2 h, the interface in the Xe + He + H ion-irradiated samples was seriously damaged, resulting in the formation of large bubbles and cracks. This damage occurred because the H atoms reduced the surface free energy, thereby promoting the nucleation and growth of bubbles. Due to the absorption effect of the SiC[sub.f] /TiC interface on defects, the SiC fiber areas near the interface recovered back to the initial nano-polycrystalline structure after annealing.</abstract><pub>MDPI AG</pub><doi>10.3390/nano14201629</doi></addata></record> |
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| source | DOAJ Directory of Open Access Journals; PubMed Central Open Access; MDPI - Multidisciplinary Digital Publishing Institute; EZB-FREE-00999 freely available EZB journals; PubMed Central |
| subjects | Analysis Annealing Composite materials Helium Hydrogen Identification and classification Irradiation Mechanical properties Methods Silicon carbide Sintering Structure Titanium Xenon |
| title | Microstructure Evolution of the Interface in SiC[sub.f]/TiC-Ti[sub.3]SiC[sub.2] Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process |
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