Surface Electronic Structure of Cr Doped Bi[sub.2]Se[sub.3] Single Crystals
Here, by using angle-resolved photoemission spectroscopy, we showed that Bi[sub.2−x] Cr[sub.x] Se[sub.3] single crystals have a distinctly well-defined band structure with a large bulk band gap and undistorted topological surface states. These spectral features are unlike their thin film forms in wh...
Gespeichert in:
Veröffentlicht in: | Crystals (Basel) 2024-09, Vol.14 (9) |
---|---|
Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 9 |
container_start_page | |
container_title | Crystals (Basel) |
container_volume | 14 |
creator | Yilmaz, Turgut Tong, Xiao Dai, Zhongwei Sadowski, Jerzy T Gu, Genda Shimada, Kenya Hwang, Sooyeon Kisslinger, Kim Vescovo, Elio Sinkovic, Boris |
description | Here, by using angle-resolved photoemission spectroscopy, we showed that Bi[sub.2−x] Cr[sub.x] Se[sub.3] single crystals have a distinctly well-defined band structure with a large bulk band gap and undistorted topological surface states. These spectral features are unlike their thin film forms in which a large nonmagnetic gap with a distorted band structure was reported. We further provide laser-based high resolution photoemission data which reveal a Dirac point gap even in the pristine sample. The gap becomes more pronounced with Cr doping into the bulk of Bi[sub.2] Se[sub.3] . These observations show that the Dirac point can be modified by the magnetic impurities as well as the light source. |
doi_str_mv | 10.3390/cryst14090812 |
format | Article |
fullrecord | <record><control><sourceid>gale</sourceid><recordid>TN_cdi_gale_infotracacademiconefile_A810694414</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A810694414</galeid><sourcerecordid>A810694414</sourcerecordid><originalsourceid>FETCH-gale_infotracacademiconefile_A8106944143</originalsourceid><addsrcrecordid>eNqVTb0KwjAYDKJgUUf3vEBr0sT-jForgmPdRKSmX0qkNpKkg29vEAdX74Y7jjsOoSUlEWM5WQnzso5ykpOMxiMUxCRlIWfrePzjp2hh7Z14pAlJUxqgYzUYWQvAZQfCGd0rgStnBuEGA1hLXBi8009o8Fad7XCL4ksFH8MuuFJ924Gv-Ou6s3M0kV5g8dUZivblqTiEbd3BVfVSO1MLzwYeSugepPL5JqMkyTmnnP09eAMZj0ua</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Surface Electronic Structure of Cr Doped Bi[sub.2]Se[sub.3] Single Crystals</title><source>DOAJ Directory of Open Access Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>MDPI - Multidisciplinary Digital Publishing Institute</source><creator>Yilmaz, Turgut ; Tong, Xiao ; Dai, Zhongwei ; Sadowski, Jerzy T ; Gu, Genda ; Shimada, Kenya ; Hwang, Sooyeon ; Kisslinger, Kim ; Vescovo, Elio ; Sinkovic, Boris</creator><creatorcontrib>Yilmaz, Turgut ; Tong, Xiao ; Dai, Zhongwei ; Sadowski, Jerzy T ; Gu, Genda ; Shimada, Kenya ; Hwang, Sooyeon ; Kisslinger, Kim ; Vescovo, Elio ; Sinkovic, Boris</creatorcontrib><description>Here, by using angle-resolved photoemission spectroscopy, we showed that Bi[sub.2−x] Cr[sub.x] Se[sub.3] single crystals have a distinctly well-defined band structure with a large bulk band gap and undistorted topological surface states. These spectral features are unlike their thin film forms in which a large nonmagnetic gap with a distorted band structure was reported. We further provide laser-based high resolution photoemission data which reveal a Dirac point gap even in the pristine sample. The gap becomes more pronounced with Cr doping into the bulk of Bi[sub.2] Se[sub.3] . These observations show that the Dirac point can be modified by the magnetic impurities as well as the light source.</description><identifier>ISSN: 2073-4352</identifier><identifier>EISSN: 2073-4352</identifier><identifier>DOI: 10.3390/cryst14090812</identifier><language>eng</language><publisher>MDPI AG</publisher><subject>Atomic properties ; Bismuth ; Chromium ; Crystals ; Electron configuration ; Materials research ; Semiconductor doping ; Structure</subject><ispartof>Crystals (Basel), 2024-09, Vol.14 (9)</ispartof><rights>COPYRIGHT 2024 MDPI AG</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,860,27903,27904</link.rule.ids></links><search><creatorcontrib>Yilmaz, Turgut</creatorcontrib><creatorcontrib>Tong, Xiao</creatorcontrib><creatorcontrib>Dai, Zhongwei</creatorcontrib><creatorcontrib>Sadowski, Jerzy T</creatorcontrib><creatorcontrib>Gu, Genda</creatorcontrib><creatorcontrib>Shimada, Kenya</creatorcontrib><creatorcontrib>Hwang, Sooyeon</creatorcontrib><creatorcontrib>Kisslinger, Kim</creatorcontrib><creatorcontrib>Vescovo, Elio</creatorcontrib><creatorcontrib>Sinkovic, Boris</creatorcontrib><title>Surface Electronic Structure of Cr Doped Bi[sub.2]Se[sub.3] Single Crystals</title><title>Crystals (Basel)</title><description>Here, by using angle-resolved photoemission spectroscopy, we showed that Bi[sub.2−x] Cr[sub.x] Se[sub.3] single crystals have a distinctly well-defined band structure with a large bulk band gap and undistorted topological surface states. These spectral features are unlike their thin film forms in which a large nonmagnetic gap with a distorted band structure was reported. We further provide laser-based high resolution photoemission data which reveal a Dirac point gap even in the pristine sample. The gap becomes more pronounced with Cr doping into the bulk of Bi[sub.2] Se[sub.3] . These observations show that the Dirac point can be modified by the magnetic impurities as well as the light source.</description><subject>Atomic properties</subject><subject>Bismuth</subject><subject>Chromium</subject><subject>Crystals</subject><subject>Electron configuration</subject><subject>Materials research</subject><subject>Semiconductor doping</subject><subject>Structure</subject><issn>2073-4352</issn><issn>2073-4352</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqVTb0KwjAYDKJgUUf3vEBr0sT-jForgmPdRKSmX0qkNpKkg29vEAdX74Y7jjsOoSUlEWM5WQnzso5ykpOMxiMUxCRlIWfrePzjp2hh7Z14pAlJUxqgYzUYWQvAZQfCGd0rgStnBuEGA1hLXBi8009o8Fad7XCL4ksFH8MuuFJ924Gv-Ou6s3M0kV5g8dUZivblqTiEbd3BVfVSO1MLzwYeSugepPL5JqMkyTmnnP09eAMZj0ua</recordid><startdate>20240901</startdate><enddate>20240901</enddate><creator>Yilmaz, Turgut</creator><creator>Tong, Xiao</creator><creator>Dai, Zhongwei</creator><creator>Sadowski, Jerzy T</creator><creator>Gu, Genda</creator><creator>Shimada, Kenya</creator><creator>Hwang, Sooyeon</creator><creator>Kisslinger, Kim</creator><creator>Vescovo, Elio</creator><creator>Sinkovic, Boris</creator><general>MDPI AG</general><scope/></search><sort><creationdate>20240901</creationdate><title>Surface Electronic Structure of Cr Doped Bi[sub.2]Se[sub.3] Single Crystals</title><author>Yilmaz, Turgut ; Tong, Xiao ; Dai, Zhongwei ; Sadowski, Jerzy T ; Gu, Genda ; Shimada, Kenya ; Hwang, Sooyeon ; Kisslinger, Kim ; Vescovo, Elio ; Sinkovic, Boris</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-gale_infotracacademiconefile_A8106944143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Atomic properties</topic><topic>Bismuth</topic><topic>Chromium</topic><topic>Crystals</topic><topic>Electron configuration</topic><topic>Materials research</topic><topic>Semiconductor doping</topic><topic>Structure</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yilmaz, Turgut</creatorcontrib><creatorcontrib>Tong, Xiao</creatorcontrib><creatorcontrib>Dai, Zhongwei</creatorcontrib><creatorcontrib>Sadowski, Jerzy T</creatorcontrib><creatorcontrib>Gu, Genda</creatorcontrib><creatorcontrib>Shimada, Kenya</creatorcontrib><creatorcontrib>Hwang, Sooyeon</creatorcontrib><creatorcontrib>Kisslinger, Kim</creatorcontrib><creatorcontrib>Vescovo, Elio</creatorcontrib><creatorcontrib>Sinkovic, Boris</creatorcontrib><jtitle>Crystals (Basel)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yilmaz, Turgut</au><au>Tong, Xiao</au><au>Dai, Zhongwei</au><au>Sadowski, Jerzy T</au><au>Gu, Genda</au><au>Shimada, Kenya</au><au>Hwang, Sooyeon</au><au>Kisslinger, Kim</au><au>Vescovo, Elio</au><au>Sinkovic, Boris</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface Electronic Structure of Cr Doped Bi[sub.2]Se[sub.3] Single Crystals</atitle><jtitle>Crystals (Basel)</jtitle><date>2024-09-01</date><risdate>2024</risdate><volume>14</volume><issue>9</issue><issn>2073-4352</issn><eissn>2073-4352</eissn><abstract>Here, by using angle-resolved photoemission spectroscopy, we showed that Bi[sub.2−x] Cr[sub.x] Se[sub.3] single crystals have a distinctly well-defined band structure with a large bulk band gap and undistorted topological surface states. These spectral features are unlike their thin film forms in which a large nonmagnetic gap with a distorted band structure was reported. We further provide laser-based high resolution photoemission data which reveal a Dirac point gap even in the pristine sample. The gap becomes more pronounced with Cr doping into the bulk of Bi[sub.2] Se[sub.3] . These observations show that the Dirac point can be modified by the magnetic impurities as well as the light source.</abstract><pub>MDPI AG</pub><doi>10.3390/cryst14090812</doi></addata></record> |
fulltext | fulltext |
identifier | ISSN: 2073-4352 |
ispartof | Crystals (Basel), 2024-09, Vol.14 (9) |
issn | 2073-4352 2073-4352 |
language | eng |
recordid | cdi_gale_infotracacademiconefile_A810694414 |
source | DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; MDPI - Multidisciplinary Digital Publishing Institute |
subjects | Atomic properties Bismuth Chromium Crystals Electron configuration Materials research Semiconductor doping Structure |
title | Surface Electronic Structure of Cr Doped Bi[sub.2]Se[sub.3] Single Crystals |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T06%3A56%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Surface%20Electronic%20Structure%20of%20Cr%20Doped%20Bi%5Bsub.2%5DSe%5Bsub.3%5D%20Single%20Crystals&rft.jtitle=Crystals%20(Basel)&rft.au=Yilmaz,%20Turgut&rft.date=2024-09-01&rft.volume=14&rft.issue=9&rft.issn=2073-4352&rft.eissn=2073-4352&rft_id=info:doi/10.3390/cryst14090812&rft_dat=%3Cgale%3EA810694414%3C/gale%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_galeid=A810694414&rfr_iscdi=true |