Formation of Black Silicon in a Process of Plasma Etching with Passivation in a SF[sub.6]/O[sub.2] Gas Mixture

This article discusses a method for forming black silicon using plasma etching at a sample temperature range from −20 °C to +20 °C in a mixture of oxygen and sulfur hexafluoride. The surface morphology of the resulting structures, the autocorrelation function of surface features, and reflectivity we...

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Veröffentlicht in:	Nanomaterials (Basel, Switzerland) Switzerland), 2024-06, Vol.14 (11)
Hauptverfasser:	Miakonkikh, Andrey, Kuzmenko, Vitaly
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Chemical properties Etching Mechanical properties Methods Oxygen Silicon Sulfur hexafluoride Thermal properties
Online-Zugang:	Volltext
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