Crystal Growth of the IR/I[sub.2]SiO[sub.5] Compounds by the Floating Zone Method Using a Laser-Diode-Heated Furnace

In recent years, rare earth silicate compounds have attracted the extensive attention of researchers owing to their potential for applications in scintillation crystals in gamma ray or X-ray detectors, as well as in thermal or environmental barrier coatings. Large high quality crystals of three members of the rare earth monosilicates family of compounds, R[sub.2] SiO[sub.5] (with R = Dy, Ho, and Er), have been grown by the floating zone method, using a laser-diode-heated floating zone furnace. Crystal growths attempts were carried out using different parameters in order to determine the optimum conditions for the growth of these materials. The phase purity and the crystalline quality of the crystal boules were analysed using powder and Laue X-ray diffraction. Single crystal X-ray diffraction experiments were carried out to determine the crystal structures of the boules. The optimum conditions used for the crystal growth of R[sub.2] SiO[sub.5] materials are reported. The phase purity and high crystalline quality of the crystals produced makes them ideal for detailed investigations of the intrinsic physical and chemical properties of these materials.