Dark Current Analysis on GeSn Ip-i-n/I Photodetectors

Group IV alloys of GeSn have been extensively investigated as a competing material alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect densities present in GeSn alloys are the major challenge in developing practical devices, owing to the low-temperature growth...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Sensors (Basel, Switzerland) Switzerland), 2023-08, Vol.23 (17)
Hauptverfasser:	Ghosh, Soumava, Sun, Greg, Morgan, Timothy A, Forcherio, Gregory T, Cheng, Hung-Hsiang, Chang, Guo-En
Format:	Artikel
Sprache:	eng
Schlagworte:	Alloys Analysis
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!