Ultrathin TiO[sub.2] Blocking Layers via Atomic Layer Deposition toward High-Performance Dye-Sensitized Photo-Electrosynthesis Cells

The collection of solar energy in chemical bonds via dye-sensitized photoelectrosynthesis cells (DSPECs) is a reliable solution. Herein, atomic layer deposition (ALD) introduced ultrathin blocking layers (BLs) between a mesoporous TiO[sub.2] membrane and fluorine-doped tin oxide (FTO), and much improved photoelectrochemical water oxidation performance was well documented. Samples with different BL thicknesses deposited on FTO were obtained by ALD. In the photoanode, polypyridyl Ru(II) complexes were used as photosensitizers, and Ru(bda)-type was used as a catalyst during water oxidation. Under one sun irradiation, the BL (i) increased the photocurrent density; (ii) slowed down the open-circuit voltage decay (OCVD) by electrochemical measurement; (iii) increased the photo-generated electron lifetime roughly from 1 s to more than 100 s; and (iv) enhanced the water oxidation efficiency from 25% to 85% with 0.4 V of applied voltage bias. All this pointed out that the ALD technique-prepared layers could greatly hinder the photogenerated electron-hole pair recombination in the TiO[sub.2]-based photoanode. This study offers critical backing for the building of molecular films by the ALD technique to split water effectively.