High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices

In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devices based on hydrogenated amorphous silicon (...

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Veröffentlicht in:	Nanomaterials 2022, Vol.12 (19)
Hauptverfasser:	Peverini, Francesca, Bizzarri, Marco, Boscardin, Maurizio, Calcagnile, Lucio, Caprai, Mirco, Caricato, Anna Paola, Cirrone, Giuseppe Antonio Pablo, Crivellari, Michele, Cuttone, Giacomo, Dunand, Sylvain, Fanò, Livio, Gianfelici, Benedetta, Hammad, Omar, Ionica, Maria, Kanxheri, Keida, Large, Matthew, Maruccio, Giuseppe, Menichelli, Mauro, Monteduro, Anna Grazia, Moscatelli, Francesco, Morozzi, Arianna, Pallotta, Stefania, Papi, Andrea, Passeri, Daniele, Petasecca, Marco, Petringa, Giada, Pis, Igor, Quarta, Gianluca, Rizzato, Silvia, Rossi, Alessandro, Rossi, Giulia, Scorzoni, Andrea, Soncini, Cristian, Servoli, Leonello, Tacchi, Silvia, Talamonti, Cinzia, Verzellesi, Giovanni, Wyrsch, Nicolas, Zema, Nicola, Pedio, Maddalena
Format:	Report
Sprache:	eng
Schlagworte:	Analysis Detectors Environmental aspects Irradiation Neutrons Reliability (Engineering) Safety and security measures Silicon
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