Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al[sub.2]O[sub.3]/ZrO[sub.2] Stacked Gate Dielectrics

A metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed based on using a Al[sub.2]O[sub.3]/ZrO[sub.2] stacked layer on conventional AlGaN/GaN HEMT to suppress the gate leakage current, decrease flicker noise, increase high-frequency performance, improve power performance...

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Veröffentlicht in:	Materials 2022-10, Vol.15 (19)
Hauptverfasser:	Huang, Cheng-Yu, Mazumder, Soumen, Lin, Pu-Chou, Lee, Kuan-Wei, Wang, Yeong-Her
Format:	Artikel
Sprache:	eng
Schlagworte:	Dielectrics Electric properties Liquors Transistors
Online-Zugang:	Volltext
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