SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF Gе.sub.xSi.sub.1 - x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

A graded-gap structure of the Ge.sub.xSi.sub.1 - x type is obtained by diffusion doping silicon with germanium. Elemental analysis of the surface of the samples showed that the concentration of silicon (in atomic percent) was 64.5%, germanium 26.9%, oxygen 5.9%, and other elements 2.7%. On the spectral dependence of the photoconductivity, a noticeable increase in the photocurrent begins at h[nu] = 0.75-0.8 eV, which approximately corresponds to the band gap of the Ge.sub.0.27Si.sub.0.73 material. The development of diffusion technology for obtaining graded-gap Ge.sub.xSi.sub.1 - x structures will allow the development of photodetectors with an extended region of spectral sensitivity.