ACTIVATION ENERGY OF THE CONDUCTANCE OF p-w-4H-SiC STRUCTURES DOPED WITH ALUMINUM BY THE METHOD OF LOW- TEMPERATURE DIFFUSION
A study has been made of the activation energy of the conductance of a p-n-4H-SiC structure created through the doping of silicon carbide with aluminum. The doping was implemented by a novel method of low-temperature diffusion, in which the diffusion of aluminum in silicon carbide is stimulated by a...
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| Veröffentlicht in: | Journal of engineering physics and thermophysics 2020-10, Vol.93 (4), p.1036 |
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| container_issue | 4 |
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| container_title | Journal of engineering physics and thermophysics |
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| creator | Zhuraev, Kh. N Yusupov, A Gulyamov, A.G Khazhiev, M.U Saidov, D. Sh Adilov, N.B |
| description | A study has been made of the activation energy of the conductance of a p-n-4H-SiC structure created through the doping of silicon carbide with aluminum. The doping was implemented by a novel method of low-temperature diffusion, in which the diffusion of aluminum in silicon carbide is stimulated by a carbon- and silicon-vacancy flux produced by the oxidation of the silicon surface. Keywords: 4H-SiC, p-n junction, low-temperature diffusion, activation energy. |
| doi_str_mv | 10.1007/s10891-020-02205-5 |
| format | Article |
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| ispartof | Journal of engineering physics and thermophysics, 2020-10, Vol.93 (4), p.1036 |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | Activation energy Analysis Methods Semiconductors Silicon carbide |
| title | ACTIVATION ENERGY OF THE CONDUCTANCE OF p-w-4H-SiC STRUCTURES DOPED WITH ALUMINUM BY THE METHOD OF LOW- TEMPERATURE DIFFUSION |
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