ACTIVATION ENERGY OF THE CONDUCTANCE OF p-w-4H-SiC STRUCTURES DOPED WITH ALUMINUM BY THE METHOD OF LOW- TEMPERATURE DIFFUSION

A study has been made of the activation energy of the conductance of a p-n-4H-SiC structure created through the doping of silicon carbide with aluminum. The doping was implemented by a novel method of low-temperature diffusion, in which the diffusion of aluminum in silicon carbide is stimulated by a carbon- and silicon-vacancy flux produced by the oxidation of the silicon surface. Keywords: 4H-SiC, p-n junction, low-temperature diffusion, activation energy.