Description of the Magnetization Oscillations of a Silicon Nanostructure in Weak Fields at Room Temperature. The Lifshitz–Kosevich Formula with Variable Effective Carrier Mass

A formalism of the statistical approach to describing de Haas–van Alphen oscillations known as the Lifshitz–Kosevich formula is developed as applied to a low-dimensional system with an effective carrier mass depending on an external magnetic field. The statistical approach makes it possible to perfo...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2020-12, Vol.54 (12), p.1593-1597
Hauptverfasser:	Romanov, V. V., Kozhevnikov, V. A., Mashkov, V. A., Bagraev, N. T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Laws, regulations and rules Low-Dimensional Systems Magnetic fields Magnetic Materials Magnetic properties Magnetism Magnetization Physics Physics and Astronomy Quantum Phenomena Semiconductor Structures Silicon
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