THE MEASUREMENT OF CHARGE CARRIER LIFETIME IN SI-GaAs:Cr AND EL2-GaAs BY PUMP-PROBE TERAHERTZ SPECTROSCOPY
In the present work, the temporal dynamics of relaxation of a nonequilibrium concentration of charge carriers in S7-GaAs:Cr and EL2-GaAs semiconductor crystals has been studied using pump-probe terahertz spectroscopy. The obtained experimental data were analyzed taking into account the mechanisms of...
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| Veröffentlicht in: | Russian physics journal 2020-08, Vol.63 (4), p.547 |
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| creator | Kolesnikova, I.I Kobtsev, D.A Redkin, R.A Sarkisov, S.Yu Tolbanov, O.P Tyazhev, A.V |
| description | In the present work, the temporal dynamics of relaxation of a nonequilibrium concentration of charge carriers in S7-GaAs:Cr and EL2-GaAs semiconductor crystals has been studied using pump-probe terahertz spectroscopy. The obtained experimental data were analyzed taking into account the mechanisms of surface and bulk Shockley-Reed-Hall recombination, radiative recombination, interband and trap assisted Auger recombination. It was found that at injection levels arising upon excitation of samples by laser radiation with a pulse duration of 35 fs and an energy of 0.1 mJ per pulse at a central wavelength of 791 nm, Auger recombination mechanisms have a significant effect. Auger recombination mechanisms make a dominant contribution to the recombination rate of nonequilibrium charge carriers at injection levels above 2 * [10.sup.18] [cm.sup.-3] for SI-GaAs:Cr and above [10.sup.18] [cm.sup.-3] for EL2-GaAs. At lower injection levels, the bulk and surface Shockley-Reed-Hall recombination are the dominant recombination mechanisms. Keywords: terahertz pump-probe spectroscopy, GaAs:Cr, charge carrier lifetime, Auger recombination |
| doi_str_mv | 10.1007/s11182-020-02068-6 |
| format | Article |
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The obtained experimental data were analyzed taking into account the mechanisms of surface and bulk Shockley-Reed-Hall recombination, radiative recombination, interband and trap assisted Auger recombination. It was found that at injection levels arising upon excitation of samples by laser radiation with a pulse duration of 35 fs and an energy of 0.1 mJ per pulse at a central wavelength of 791 nm, Auger recombination mechanisms have a significant effect. Auger recombination mechanisms make a dominant contribution to the recombination rate of nonequilibrium charge carriers at injection levels above 2 * [10.sup.18] [cm.sup.-3] for SI-GaAs:Cr and above [10.sup.18] [cm.sup.-3] for EL2-GaAs. At lower injection levels, the bulk and surface Shockley-Reed-Hall recombination are the dominant recombination mechanisms. 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The obtained experimental data were analyzed taking into account the mechanisms of surface and bulk Shockley-Reed-Hall recombination, radiative recombination, interband and trap assisted Auger recombination. It was found that at injection levels arising upon excitation of samples by laser radiation with a pulse duration of 35 fs and an energy of 0.1 mJ per pulse at a central wavelength of 791 nm, Auger recombination mechanisms have a significant effect. Auger recombination mechanisms make a dominant contribution to the recombination rate of nonequilibrium charge carriers at injection levels above 2 * [10.sup.18] [cm.sup.-3] for SI-GaAs:Cr and above [10.sup.18] [cm.sup.-3] for EL2-GaAs. At lower injection levels, the bulk and surface Shockley-Reed-Hall recombination are the dominant recombination mechanisms. 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The obtained experimental data were analyzed taking into account the mechanisms of surface and bulk Shockley-Reed-Hall recombination, radiative recombination, interband and trap assisted Auger recombination. It was found that at injection levels arising upon excitation of samples by laser radiation with a pulse duration of 35 fs and an energy of 0.1 mJ per pulse at a central wavelength of 791 nm, Auger recombination mechanisms have a significant effect. Auger recombination mechanisms make a dominant contribution to the recombination rate of nonequilibrium charge carriers at injection levels above 2 * [10.sup.18] [cm.sup.-3] for SI-GaAs:Cr and above [10.sup.18] [cm.sup.-3] for EL2-GaAs. At lower injection levels, the bulk and surface Shockley-Reed-Hall recombination are the dominant recombination mechanisms. Keywords: terahertz pump-probe spectroscopy, GaAs:Cr, charge carrier lifetime, Auger recombination</abstract><pub>Springer</pub><doi>10.1007/s11182-020-02068-6</doi></addata></record> |
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| subjects | Gallium arsenide Investigations Ionizing radiation Measurement Spectrum analysis |
| title | THE MEASUREMENT OF CHARGE CARRIER LIFETIME IN SI-GaAs:Cr AND EL2-GaAs BY PUMP-PROBE TERAHERTZ SPECTROSCOPY |
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