nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 [mu]m

The results of studying the photoelectric characteristics of an nBn structure are presented. The photodiodes based on such structures may have a cutoff wavelength as high as 5 [mu]m. Calculations based on these results show that such photodiodes have a threshold photosensitivity comparable with that...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2018-12, Vol.52 (13), p.1743
Hauptverfasser:	Kulikov, V. B, Maslov, D. V, Sabirov, A. R, Solodkov, A. A, Dudin, A. L, Katsavets, N. I, Kogan, I. V
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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