Simulation of the [beta]-Voltaic Effect in Silicon pin Structures Irradiated with Electrons From a Nickel-63 [beta] Source

The prospects of [beta] voltaics as electric-power sources for semiconductor circuits are considered. Experimental studies show that charging of the surface and a decrease in the electrovoltaic power are important. Simulation of the [beta]-voltaic effect induced by electrons from a nickel-63 source on silicon pin structures is performed; it is shown that the coefficient of the collection of generated charge carriers can be as high as 13%. The dose dependences of the performance efficiency of silicon [beta]- voltaic structures are determined for the case of irradiation with a particles and [gamma]-ray photons; it is shown that 1.3 x [10.sup.14] and [10.sup.20] [cm.sup.-2], respectively, are the threshold doses, above which a rapid decrease in efficiency occurs. The optimal parameters of microchannel structures in [beta]-voltaic electronics, in which the width of the channels and the distance between them correspond to 3 and 10 [micro]m, are determined. DOI: 10.1134/S1063782616010188