Contribution of selective scattering to increase in the thermoelectric power of nanocrystalline films [Cr.sub.1-x][Si.sub.x]

The results of the experimental investigation of the thermoelectric power and electrical conductivity of amorphous and nanocrystalline films in the [Cr.sub.1-x][Si.sub.x] (0.65 < x < 0.89) system at temperatures ranging from 300 to 800 K have been presented. It has been shown that the amorphous films rapidly crystallize at temperatures above 550 K. During the crystallization, the amorphous films transform into the nanocrystalline state. The rate of crystallization rapidly decreases with a decrease in the temperature. The in situ measurements of the thermoelectric power and electrical resistivity of the Cr[Si.sub.2] film have been performed during isothermal annealing at a temperature of 496 K. It has been demonstrated that the crystallization leads to an additional contribution to the thermoelectric power due to selective scattering of charge carriers at the boundaries of the nanocrystals.