Formation of the low-resistivity compound [Cu.sub.3]Ge by low-temperature treatment in an atomic hydrogen flux

The systematic features of the formation of the low-resistivity compound [Cu.sub.3]Ge by low-temperature treatment of a Cu/Ge two-layer system in an atomic hydrogen flux are studied. The Cu/Ge two-layer system is deposited onto an i-GaAs substrate. Treatment of the Cu/Ge/i-GaAs system, in which the...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2016-09, Vol.50 (9), p.1236
Hauptverfasser:	Erofeev, E.V, Kazimirov, A.I, Fedin, I.V, Kagadei, V.A
Format:	Artikel
Sprache:	eng
Schlagworte:	Electric properties Gallium arsenide Hydrogen Movies
Online-Zugang:	Volltext
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