On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in [n.sup.+]-GaN substrates
The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped [n.sup.+]-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light, which is substantially higher in [n.sup.+]...
Gespeichert in:
| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2016-05, p.699 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | 699 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | |
| creator | Virko, M.V Kogotkov, V.S Leonidov, A.A Voronenkov, V.V Rebane, Yu. T Zubrilov, A.S Gorbunov, R.I Latyshev, P.E Bochkareva, N.I Lelikov, Yu. S Tarhin, D.V Smirnov, A.N Davydov, V.Yu Shreter, Yu. G |
| description | The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped [n.sup.+]-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light, which is substantially higher in [n.sup.+]-GaN films. DOI: 10.1134/S1063782616050250 |
| doi_str_mv | 10.1134/S1063782616050250 |
| format | Article |
| fullrecord | <record><control><sourceid>gale</sourceid><recordid>TN_cdi_gale_infotracacademiconefile_A455612844</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A455612844</galeid><sourcerecordid>A455612844</sourcerecordid><originalsourceid>FETCH-gale_infotracacademiconefile_A4556128443</originalsourceid><addsrcrecordid>eNqVjrtOxDAQRV2AxMLyAXTTQ4Kd2CEtQjy2AYmlQ2jlJOPEyLFXHm_Bj_C9eAGJGk1xpaM5M5exM8FLIWp5uRa8qa_aqhENV7xS_IAt9qjYsyN2TPTOuRCtkgv2-eQhTQhOE0YYMOl-mtEnCAZ8ca8fwVg3E5gYZqBdRynqhHQBXRYGCD92psGPoDsKcZtspllfPYOz45Sg-8g6IvSTjmMOHaPFSGA9vPqSdtvy_O371d_9JTs02hGe_uYJK-9uX24eilE73FhvQt7r8ww42z54zC1xcy2VakTVSln_W_gCiqZkGQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in [n.sup.+]-GaN substrates</title><source>SpringerLink Journals - AutoHoldings</source><creator>Virko, M.V ; Kogotkov, V.S ; Leonidov, A.A ; Voronenkov, V.V ; Rebane, Yu. T ; Zubrilov, A.S ; Gorbunov, R.I ; Latyshev, P.E ; Bochkareva, N.I ; Lelikov, Yu. S ; Tarhin, D.V ; Smirnov, A.N ; Davydov, V.Yu ; Shreter, Yu. G</creator><creatorcontrib>Virko, M.V ; Kogotkov, V.S ; Leonidov, A.A ; Voronenkov, V.V ; Rebane, Yu. T ; Zubrilov, A.S ; Gorbunov, R.I ; Latyshev, P.E ; Bochkareva, N.I ; Lelikov, Yu. S ; Tarhin, D.V ; Smirnov, A.N ; Davydov, V.Yu ; Shreter, Yu. G</creatorcontrib><description>The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped [n.sup.+]-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light, which is substantially higher in [n.sup.+]-GaN films. DOI: 10.1134/S1063782616050250</description><identifier>ISSN: 1063-7826</identifier><identifier>DOI: 10.1134/S1063782616050250</identifier><language>eng</language><publisher>Springer</publisher><subject>Epitaxy ; Gallium nitrate ; Light-emitting diodes ; Liquors ; Semiconductor industry</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2016-05, p.699</ispartof><rights>COPYRIGHT 2016 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Virko, M.V</creatorcontrib><creatorcontrib>Kogotkov, V.S</creatorcontrib><creatorcontrib>Leonidov, A.A</creatorcontrib><creatorcontrib>Voronenkov, V.V</creatorcontrib><creatorcontrib>Rebane, Yu. T</creatorcontrib><creatorcontrib>Zubrilov, A.S</creatorcontrib><creatorcontrib>Gorbunov, R.I</creatorcontrib><creatorcontrib>Latyshev, P.E</creatorcontrib><creatorcontrib>Bochkareva, N.I</creatorcontrib><creatorcontrib>Lelikov, Yu. S</creatorcontrib><creatorcontrib>Tarhin, D.V</creatorcontrib><creatorcontrib>Smirnov, A.N</creatorcontrib><creatorcontrib>Davydov, V.Yu</creatorcontrib><creatorcontrib>Shreter, Yu. G</creatorcontrib><title>On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in [n.sup.+]-GaN substrates</title><title>Semiconductors (Woodbury, N.Y.)</title><description>The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped [n.sup.+]-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light, which is substantially higher in [n.sup.+]-GaN films. DOI: 10.1134/S1063782616050250</description><subject>Epitaxy</subject><subject>Gallium nitrate</subject><subject>Light-emitting diodes</subject><subject>Liquors</subject><subject>Semiconductor industry</subject><issn>1063-7826</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqVjrtOxDAQRV2AxMLyAXTTQ4Kd2CEtQjy2AYmlQ2jlJOPEyLFXHm_Bj_C9eAGJGk1xpaM5M5exM8FLIWp5uRa8qa_aqhENV7xS_IAt9qjYsyN2TPTOuRCtkgv2-eQhTQhOE0YYMOl-mtEnCAZ8ca8fwVg3E5gYZqBdRynqhHQBXRYGCD92psGPoDsKcZtspllfPYOz45Sg-8g6IvSTjmMOHaPFSGA9vPqSdtvy_O371d_9JTs02hGe_uYJK-9uX24eilE73FhvQt7r8ww42z54zC1xcy2VakTVSln_W_gCiqZkGQ</recordid><startdate>20160501</startdate><enddate>20160501</enddate><creator>Virko, M.V</creator><creator>Kogotkov, V.S</creator><creator>Leonidov, A.A</creator><creator>Voronenkov, V.V</creator><creator>Rebane, Yu. T</creator><creator>Zubrilov, A.S</creator><creator>Gorbunov, R.I</creator><creator>Latyshev, P.E</creator><creator>Bochkareva, N.I</creator><creator>Lelikov, Yu. S</creator><creator>Tarhin, D.V</creator><creator>Smirnov, A.N</creator><creator>Davydov, V.Yu</creator><creator>Shreter, Yu. G</creator><general>Springer</general><scope/></search><sort><creationdate>20160501</creationdate><title>On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in [n.sup.+]-GaN substrates</title><author>Virko, M.V ; Kogotkov, V.S ; Leonidov, A.A ; Voronenkov, V.V ; Rebane, Yu. T ; Zubrilov, A.S ; Gorbunov, R.I ; Latyshev, P.E ; Bochkareva, N.I ; Lelikov, Yu. S ; Tarhin, D.V ; Smirnov, A.N ; Davydov, V.Yu ; Shreter, Yu. G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-gale_infotracacademiconefile_A4556128443</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Epitaxy</topic><topic>Gallium nitrate</topic><topic>Light-emitting diodes</topic><topic>Liquors</topic><topic>Semiconductor industry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Virko, M.V</creatorcontrib><creatorcontrib>Kogotkov, V.S</creatorcontrib><creatorcontrib>Leonidov, A.A</creatorcontrib><creatorcontrib>Voronenkov, V.V</creatorcontrib><creatorcontrib>Rebane, Yu. T</creatorcontrib><creatorcontrib>Zubrilov, A.S</creatorcontrib><creatorcontrib>Gorbunov, R.I</creatorcontrib><creatorcontrib>Latyshev, P.E</creatorcontrib><creatorcontrib>Bochkareva, N.I</creatorcontrib><creatorcontrib>Lelikov, Yu. S</creatorcontrib><creatorcontrib>Tarhin, D.V</creatorcontrib><creatorcontrib>Smirnov, A.N</creatorcontrib><creatorcontrib>Davydov, V.Yu</creatorcontrib><creatorcontrib>Shreter, Yu. G</creatorcontrib><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Virko, M.V</au><au>Kogotkov, V.S</au><au>Leonidov, A.A</au><au>Voronenkov, V.V</au><au>Rebane, Yu. T</au><au>Zubrilov, A.S</au><au>Gorbunov, R.I</au><au>Latyshev, P.E</au><au>Bochkareva, N.I</au><au>Lelikov, Yu. S</au><au>Tarhin, D.V</au><au>Smirnov, A.N</au><au>Davydov, V.Yu</au><au>Shreter, Yu. G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in [n.sup.+]-GaN substrates</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><date>2016-05-01</date><risdate>2016</risdate><spage>699</spage><pages>699-</pages><issn>1063-7826</issn><abstract>The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped [n.sup.+]-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light, which is substantially higher in [n.sup.+]-GaN films. DOI: 10.1134/S1063782616050250</abstract><pub>Springer</pub><doi>10.1134/S1063782616050250</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2016-05, p.699 |
| issn | 1063-7826 |
| language | eng |
| recordid | cdi_gale_infotracacademiconefile_A455612844 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Epitaxy Gallium nitrate Light-emitting diodes Liquors Semiconductor industry |
| title | On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in [n.sup.+]-GaN substrates |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-21T05%3A20%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=On%20the%20laser%20detachment%20of%20n-GaN%20films%20from%20substrates,%20based%20on%20the%20strong%20absorption%20of%20IR%20light%20by%20free%20charge%20carriers%20in%20%5Bn.sup.+%5D-GaN%20substrates&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Virko,%20M.V&rft.date=2016-05-01&rft.spage=699&rft.pages=699-&rft.issn=1063-7826&rft_id=info:doi/10.1134/S1063782616050250&rft_dat=%3Cgale%3EA455612844%3C/gale%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_galeid=A455612844&rfr_iscdi=true |