On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in [n.sup.+]-GaN substrates

On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in [n.sup.+]-GaN substrates

The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped [n.sup.+]-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light, which is substantially higher in [n.sup.+]...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-05, p.699
Hauptverfasser: Virko, M.V, Kogotkov, V.S, Leonidov, A.A, Voronenkov, V.V, Rebane, Yu. T, Zubrilov, A.S, Gorbunov, R.I, Latyshev, P.E, Bochkareva, N.I, Lelikov, Yu. S, Tarhin, D.V, Smirnov, A.N, Davydov, V.Yu, Shreter, Yu. G
Format: Artikel
Sprache:eng
Schlagworte:
Epitaxy
Gallium nitrate
Light-emitting diodes
Liquors
Semiconductor industry
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Zusammenfassung:The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped [n.sup.+]-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light, which is substantially higher in [n.sup.+]-GaN films. DOI: 10.1134/S1063782616050250
ISSN:1063-7826
DOI:10.1134/S1063782616050250