Multilevel resistance state of Cu/La.sub.2O.sub.3/Pt forming-free switching devices

An improved temperature dependent uniformity and reliability is investigated in La.sub.2O.sub.3/Pt-based memory devices with Cu top electrode. The microstructural investigation suggested the formation of polycrystalline La.sub.2O.sub.3 layer with stoichiometric chemical composition confirmed by X-ra...

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Veröffentlicht in:	Journal of materials science 2016-05, p.4411
Hauptverfasser:	Sarkar, Pranab Kumar, Prajapat, Manoj, Barman, Arabinda, Bhattacharjee, Snigdha, Roy, Asim
Format:	Artikel
Sprache:	eng
Schlagworte:	Memory (Computers)
Online-Zugang:	Volltext
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