Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots

The polarization anisotropy of electroluminescence and absorption in a ten-layer system of vertically correlated InAs quantum dots separated by 8.6-nm-thick GaAs spacer layers is investigated experimentally. The quantum-dot system is built into a two-section laser structure with sections of equal le...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2014-08, Vol.48 (8), p.1031-1035
Hauptverfasser:	Sobolev, M. M., Gadzhiyev, I. M., Buyalo, M. S., Nevedomskiy, V. N., Zadiranov, Yu. M., Zolotareva, R. V., Vasil’ev, A. P., Ustinov, V. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropy Gallium arsenide Low-Dimensional Systems Magnetic Materials Magnetism Physics Physics and Astronomy Quantum Phenomena Semiconductor Structures
Online-Zugang:	Volltext
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