Tunneling transport through passivated CdS nanocrystal arrays grown by the Langmuir-Blodgett method
Tunneling electron transport through CdS nanocrystal arrays fabricated by the Langmuir-Blodgett method are studied by scanning electron spectroscopy. The effect of the matrix-annealing atmosphere on tunneling transport through the nanocrystal arrays is studied. Electron capture at traps in the case...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2014-09, Vol.48 (9), p.1205-1210 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Tunneling electron transport through CdS nanocrystal arrays fabricated by the Langmuir-Blodgett method are studied by scanning electron spectroscopy. The effect of the matrix-annealing atmosphere on tunneling transport through the nanocrystal arrays is studied. Electron capture at traps in the case of nanocrystals annealed in vacuum is detected by tunneling current-voltage characteristics analyzed using a model relating the data of tunneling spectroscopy, photoluminescence, and quantum-mechanical calculation. Analysis shows that the nanocrystal surface is passivated by an ammonia monolayer upon annealing in an ammonia atmosphere. It is found that the substrate and surrounding non-passivated nanocrystals have an effect on the electron polarization energy. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782614090206 |