Influence of thermal treatment on the microstructure and electrical and optical properties of SnS thin films
The influence of thermal treatment on the microstructure and electrical and optical properties of SnS films obtained by the “hot-wall” method has been investigated. It has been established that the thermal treatment does not lead to the formation of foreign phases in the film composition. The averag...
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| Veröffentlicht in: | Physics of the solid state 2014-07, Vol.56 (7), p.1310-1314 |
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| container_title | Physics of the solid state |
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| creator | Bashkirov, S. A. Gladyshev, P. P. Gremenok, V. F. Ivanov, V. A. |
| description | The influence of thermal treatment on the microstructure and electrical and optical properties of SnS films obtained by the “hot-wall” method has been investigated. It has been established that the thermal treatment does not lead to the formation of foreign phases in the film composition. The average film roughness after the thermal treatment increases from 10 to 20 nm. Resistivity after the thermal treatment decreases from 230 to 100 Ωcm (
T
= 300 K), while the temperature coefficient of thermopower increases from 40 to 330 μV K
−1
. The band gap is 1.46 eV. The adsorption edge is not displaced after the thermal treatment. |
| doi_str_mv | 10.1134/S1063783414070038 |
| format | Article |
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T
= 300 K), while the temperature coefficient of thermopower increases from 40 to 330 μV K
−1
. The band gap is 1.46 eV. The adsorption edge is not displaced after the thermal treatment.</description><identifier>ISSN: 1063-7834</identifier><identifier>EISSN: 1090-6460</identifier><identifier>DOI: 10.1134/S1063783414070038</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Adsorption ; Analysis ; Dielectric films ; Electric properties ; Optical properties ; Physics ; Physics and Astronomy ; Semiconductors ; Solid State Physics ; Thin films</subject><ispartof>Physics of the solid state, 2014-07, Vol.56 (7), p.1310-1314</ispartof><rights>Pleiades Publishing, Ltd. 2014</rights><rights>COPYRIGHT 2014 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-687352b908bd706f1fa9c4dd9794af7794dd663e5793e3797346820f3ded3f243</citedby><cites>FETCH-LOGICAL-c361t-687352b908bd706f1fa9c4dd9794af7794dd663e5793e3797346820f3ded3f243</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063783414070038$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063783414070038$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Bashkirov, S. A.</creatorcontrib><creatorcontrib>Gladyshev, P. P.</creatorcontrib><creatorcontrib>Gremenok, V. F.</creatorcontrib><creatorcontrib>Ivanov, V. A.</creatorcontrib><title>Influence of thermal treatment on the microstructure and electrical and optical properties of SnS thin films</title><title>Physics of the solid state</title><addtitle>Phys. Solid State</addtitle><description>The influence of thermal treatment on the microstructure and electrical and optical properties of SnS films obtained by the “hot-wall” method has been investigated. It has been established that the thermal treatment does not lead to the formation of foreign phases in the film composition. The average film roughness after the thermal treatment increases from 10 to 20 nm. Resistivity after the thermal treatment decreases from 230 to 100 Ωcm (
T
= 300 K), while the temperature coefficient of thermopower increases from 40 to 330 μV K
−1
. The band gap is 1.46 eV. The adsorption edge is not displaced after the thermal treatment.</description><subject>Adsorption</subject><subject>Analysis</subject><subject>Dielectric films</subject><subject>Electric properties</subject><subject>Optical properties</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Semiconductors</subject><subject>Solid State Physics</subject><subject>Thin films</subject><issn>1063-7834</issn><issn>1090-6460</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kc9LwzAUgIsoOKd_gLdePXQmfV3SHsfwx2AgWD2XLHmZHW1SkhT0vzd1XoYggeQl-b5H8l6S3FKyoBSK-5oSBryEghaEEwLlWTKjpCIZKxg5n2IG2XR_mVx5fyCEUrqsZkm3Mbob0UhMrU7DB7pedGlwKEKPJqTWTIdp30pnfXCjDKPDVBiVYocyuFZGfNraIfzEg7MDutCinxLWpo5-a1Lddr2_Ti606Dze_K7z5P3x4W39nG1fnjbr1TaTwGjIWMlhme8qUu4UJ0xTLSpZKFXxqhCax1kpxgCXvAIEXnEoWJkTDQoV6LyAebI45t2LDpvWaBuckHEojB-xBuNrsFlFFSgD4FG4OxEiE_Az7MXofbOpX09ZemSniniHuhlc2wv31VDSTL1o_vQiOvnR8ZE1e3TNwY7OxBr8I30DB96LFw</recordid><startdate>20140701</startdate><enddate>20140701</enddate><creator>Bashkirov, S. A.</creator><creator>Gladyshev, P. P.</creator><creator>Gremenok, V. F.</creator><creator>Ivanov, V. A.</creator><general>Pleiades Publishing</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope><scope>ISR</scope></search><sort><creationdate>20140701</creationdate><title>Influence of thermal treatment on the microstructure and electrical and optical properties of SnS thin films</title><author>Bashkirov, S. A. ; Gladyshev, P. P. ; Gremenok, V. F. ; Ivanov, V. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-687352b908bd706f1fa9c4dd9794af7794dd663e5793e3797346820f3ded3f243</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Adsorption</topic><topic>Analysis</topic><topic>Dielectric films</topic><topic>Electric properties</topic><topic>Optical properties</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Semiconductors</topic><topic>Solid State Physics</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bashkirov, S. A.</creatorcontrib><creatorcontrib>Gladyshev, P. P.</creatorcontrib><creatorcontrib>Gremenok, V. F.</creatorcontrib><creatorcontrib>Ivanov, V. A.</creatorcontrib><collection>CrossRef</collection><collection>Gale In Context: Science</collection><jtitle>Physics of the solid state</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bashkirov, S. A.</au><au>Gladyshev, P. P.</au><au>Gremenok, V. F.</au><au>Ivanov, V. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of thermal treatment on the microstructure and electrical and optical properties of SnS thin films</atitle><jtitle>Physics of the solid state</jtitle><stitle>Phys. Solid State</stitle><date>2014-07-01</date><risdate>2014</risdate><volume>56</volume><issue>7</issue><spage>1310</spage><epage>1314</epage><pages>1310-1314</pages><issn>1063-7834</issn><eissn>1090-6460</eissn><abstract>The influence of thermal treatment on the microstructure and electrical and optical properties of SnS films obtained by the “hot-wall” method has been investigated. It has been established that the thermal treatment does not lead to the formation of foreign phases in the film composition. The average film roughness after the thermal treatment increases from 10 to 20 nm. Resistivity after the thermal treatment decreases from 230 to 100 Ωcm (
T
= 300 K), while the temperature coefficient of thermopower increases from 40 to 330 μV K
−1
. The band gap is 1.46 eV. The adsorption edge is not displaced after the thermal treatment.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063783414070038</doi><tpages>5</tpages></addata></record> |
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| subjects | Adsorption Analysis Dielectric films Electric properties Optical properties Physics Physics and Astronomy Semiconductors Solid State Physics Thin films |
| title | Influence of thermal treatment on the microstructure and electrical and optical properties of SnS thin films |
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