Memory electrical switching in hydrated amorphous vanadium dioxide
Experimental data for the effect of memory electrical switching in a metal—oxide—metal structure based on hydrated vanadium dioxide obtained by the method of anodic—cathodic polarization are discussed. A model that assumes the key role of the ion current in the switching mechanism is suggested. This...
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| Veröffentlicht in: | Technical physics 2010-02, Vol.55 (2), p.247-250 |
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| container_title | Technical physics |
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| creator | Putrolainen, V. V. Boriskov, P. P. Velichko, A. A. Pergament, A. L. Kuldin, N. A. |
| description | Experimental data for the effect of memory electrical switching in a metal—oxide—metal structure based on hydrated vanadium dioxide obtained by the method of anodic—cathodic polarization are discussed. A model that assumes the key role of the ion current in the switching mechanism is suggested. This model makes it possible to determine the critical parameters of the material (the concentration and mobility of impurity ions) that influence the origination of the effect. The field dependence of the ion mobility derived by simulating the switching effect is explained through the hopping transfer mechanism in terms of the percolation theory. |
| doi_str_mv | 10.1134/S1063784210020143 |
| format | Article |
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The field dependence of the ion mobility derived by simulating the switching effect is explained through the hopping transfer mechanism in terms of the percolation theory.</description><identifier>ISSN: 1063-7842</identifier><identifier>EISSN: 1090-6525</identifier><identifier>DOI: 10.1134/S1063784210020143</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Analysis ; Classical and Continuum Physics ; Physics ; Physics and Astronomy ; Solid State Electronics ; Transition metal compounds ; Vanadium</subject><ispartof>Technical physics, 2010-02, Vol.55 (2), p.247-250</ispartof><rights>Pleiades Publishing, Ltd. 2010</rights><rights>COPYRIGHT 2010 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-c993254e6439925a806e76fa1df5f04479528f36b950c1027d287fc6ed0897833</citedby><cites>FETCH-LOGICAL-c327t-c993254e6439925a806e76fa1df5f04479528f36b950c1027d287fc6ed0897833</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063784210020143$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063784210020143$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids></links><search><creatorcontrib>Putrolainen, V. 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A model that assumes the key role of the ion current in the switching mechanism is suggested. This model makes it possible to determine the critical parameters of the material (the concentration and mobility of impurity ions) that influence the origination of the effect. The field dependence of the ion mobility derived by simulating the switching effect is explained through the hopping transfer mechanism in terms of the percolation theory.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063784210020143</doi><tpages>4</tpages></addata></record> |
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| ispartof | Technical physics, 2010-02, Vol.55 (2), p.247-250 |
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| language | eng |
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| subjects | Analysis Classical and Continuum Physics Physics Physics and Astronomy Solid State Electronics Transition metal compounds Vanadium |
| title | Memory electrical switching in hydrated amorphous vanadium dioxide |
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