On the control of the nematic orientation on the silicon surface processed by a focused gallium ion beam

On the control of the nematic orientation on the silicon surface processed by a focused gallium ion beam

Preliminary results of studying the orientation of a 5CB nematic on the single-crystalline silicon surface processed by a 30-keV focused Ga ion beam ar e reported. It is shown that the nematic can be controllably imparted on a homeotropic or inclined orientation depending on the surface irradiation...

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Veröffentlicht in:Technical physics 2010-06, Vol.55 (6), p.883-886
Hauptverfasser: Kucheev, S. I., Tuchina, Yu. S.
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Classical and Continuum Physics
Physics
Physics and Astronomy
Short Communications
Silicon
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Tuchina, Yu. S.
description Preliminary results of studying the orientation of a 5CB nematic on the single-crystalline silicon surface processed by a 30-keV focused Ga ion beam ar e reported. It is shown that the nematic can be controllably imparted on a homeotropic or inclined orientation depending on the surface irradiation dose. By varying the scanning raster of the ion beam, one can obtain different surface patterns with a micrometer resolution and a desired orientation of the nematic.
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subjects Classical and Continuum Physics
Physics
Physics and Astronomy
Short Communications
Silicon
title On the control of the nematic orientation on the silicon surface processed by a focused gallium ion beam
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