Formation of the chemical composition of transition metal dichalcogenide thin films at pulsed laser deposition

The formation of the chemical composition of dichalcogenide films at pulsed laser deposition in vacuum and in rarefied gases (Ar, H 2 ) is investigated with MoSe x thin-film coatings. It is found that deposition in gases increases the selenium concentration and somewhat flattens the composition over...

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Veröffentlicht in:	Technical physics 2010-10, Vol.55 (10), p.1509-1516
Hauptverfasser:	Fominski, V. Yu, Romanov, R. I., Gnedovets, A. G., Nevolin, V. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Classical and Continuum Physics Coatings Dielectric films Electron and Ion Emission Physics Physics and Astronomy Surface Thin films Transition metal compounds
Online-Zugang:	Volltext
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