Role of samarium atoms in the formation of the structure of As-Se-S chalcogenide vitreous semiconductors
The Raman spectra of films of samarium-doped As-Se-S three-component chalcogenide vitreous semiconductors are studied. It is shown that the spectra are constituted by four bands in the frequency ranges 10–100, 195–290, 290–404, and 420–507 cm −1 , which strongly vary with doping. The structural unit...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2014-06, Vol.48 (6), p.796-799 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Alekberov, R. I. Isayev, A. I. Mekhtiyeva, S. I. Isayeva, G. A. |
| description | The Raman spectra of films of samarium-doped As-Se-S three-component chalcogenide vitreous semiconductors are studied. It is shown that the spectra are constituted by four bands in the frequency ranges 10–100, 195–290, 290–404, and 420–507 cm
−1
, which strongly vary with doping. The structural units in As-Se-S and their possible changes upon doping are determined. The results obtained are accounted for by the specific distribution of samarium atoms in the sample and by their chemical activity. |
| doi_str_mv | 10.1134/S1063782614060025 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_cross</sourceid><recordid>TN_cdi_gale_infotracacademiconefile_A373577779</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A373577779</galeid><sourcerecordid>A373577779</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-dd649917cb07f2be8c4e0e5a89ed4d1d353a570eb2afa7b823db7106a77288003</originalsourceid><addsrcrecordid>eNp9kN1KxDAQhYMouK4-gHd5ga75aZv2cln8gwXB6nVJk8lulraRJBV8e1PrneDkYsLJ-YbMQeiWkg2lPL9rKCm5qFhJc1ISwooztKKkJlmZi_p8vpc8m98v0VUIJ0IorYp8hY6vrgfsDA5ykN5OA5bRDQHbEccjYOP8IKN142yZhRD9pOLkf5htyBrIGqyOslfuAKPVgD9t9OCmgAMMVrlRJ7_z4RpdGNkHuPnta_T-cP-2e8r2L4_Pu-0-U5yJmGld5nVNheqIMKyDSuVAoJBVDTrXVPOCy0IQ6Jg0UnQV47oTaTkpBKsqQvgabZa5B9lDa0fjopcqHb18B4xN-pYLXohUdQLoAijvQvBg2g9vUxZfLSXtnG37J9vEsIUJyTsewLcnN_kx7fUP9A1yW3xI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Role of samarium atoms in the formation of the structure of As-Se-S chalcogenide vitreous semiconductors</title><source>SpringerLink (Online service)</source><creator>Alekberov, R. I. ; Isayev, A. I. ; Mekhtiyeva, S. I. ; Isayeva, G. A.</creator><creatorcontrib>Alekberov, R. I. ; Isayev, A. I. ; Mekhtiyeva, S. I. ; Isayeva, G. A.</creatorcontrib><description>The Raman spectra of films of samarium-doped As-Se-S three-component chalcogenide vitreous semiconductors are studied. It is shown that the spectra are constituted by four bands in the frequency ranges 10–100, 195–290, 290–404, and 420–507 cm
−1
, which strongly vary with doping. The structural units in As-Se-S and their possible changes upon doping are determined. The results obtained are accounted for by the specific distribution of samarium atoms in the sample and by their chemical activity.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782614060025</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Low-Dimensional Systems ; Magnetic Materials ; Magnetism ; Physics ; Physics and Astronomy ; Quantum Phenomena ; Raman spectroscopy ; Rare earth metals ; Semiconductor Structures ; Semiconductors</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2014-06, Vol.48 (6), p.796-799</ispartof><rights>Pleiades Publishing, Ltd. 2014</rights><rights>COPYRIGHT 2014 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-dd649917cb07f2be8c4e0e5a89ed4d1d353a570eb2afa7b823db7106a77288003</citedby><cites>FETCH-LOGICAL-c327t-dd649917cb07f2be8c4e0e5a89ed4d1d353a570eb2afa7b823db7106a77288003</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782614060025$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782614060025$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Alekberov, R. I.</creatorcontrib><creatorcontrib>Isayev, A. I.</creatorcontrib><creatorcontrib>Mekhtiyeva, S. I.</creatorcontrib><creatorcontrib>Isayeva, G. A.</creatorcontrib><title>Role of samarium atoms in the formation of the structure of As-Se-S chalcogenide vitreous semiconductors</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The Raman spectra of films of samarium-doped As-Se-S three-component chalcogenide vitreous semiconductors are studied. It is shown that the spectra are constituted by four bands in the frequency ranges 10–100, 195–290, 290–404, and 420–507 cm
−1
, which strongly vary with doping. The structural units in As-Se-S and their possible changes upon doping are determined. The results obtained are accounted for by the specific distribution of samarium atoms in the sample and by their chemical activity.</description><subject>Low-Dimensional Systems</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum Phenomena</subject><subject>Raman spectroscopy</subject><subject>Rare earth metals</subject><subject>Semiconductor Structures</subject><subject>Semiconductors</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kN1KxDAQhYMouK4-gHd5ga75aZv2cln8gwXB6nVJk8lulraRJBV8e1PrneDkYsLJ-YbMQeiWkg2lPL9rKCm5qFhJc1ISwooztKKkJlmZi_p8vpc8m98v0VUIJ0IorYp8hY6vrgfsDA5ykN5OA5bRDQHbEccjYOP8IKN142yZhRD9pOLkf5htyBrIGqyOslfuAKPVgD9t9OCmgAMMVrlRJ7_z4RpdGNkHuPnta_T-cP-2e8r2L4_Pu-0-U5yJmGld5nVNheqIMKyDSuVAoJBVDTrXVPOCy0IQ6Jg0UnQV47oTaTkpBKsqQvgabZa5B9lDa0fjopcqHb18B4xN-pYLXohUdQLoAijvQvBg2g9vUxZfLSXtnG37J9vEsIUJyTsewLcnN_kx7fUP9A1yW3xI</recordid><startdate>20140601</startdate><enddate>20140601</enddate><creator>Alekberov, R. I.</creator><creator>Isayev, A. I.</creator><creator>Mekhtiyeva, S. I.</creator><creator>Isayeva, G. A.</creator><general>Pleiades Publishing</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20140601</creationdate><title>Role of samarium atoms in the formation of the structure of As-Se-S chalcogenide vitreous semiconductors</title><author>Alekberov, R. I. ; Isayev, A. I. ; Mekhtiyeva, S. I. ; Isayeva, G. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-dd649917cb07f2be8c4e0e5a89ed4d1d353a570eb2afa7b823db7106a77288003</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Low-Dimensional Systems</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum Phenomena</topic><topic>Raman spectroscopy</topic><topic>Rare earth metals</topic><topic>Semiconductor Structures</topic><topic>Semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Alekberov, R. I.</creatorcontrib><creatorcontrib>Isayev, A. I.</creatorcontrib><creatorcontrib>Mekhtiyeva, S. I.</creatorcontrib><creatorcontrib>Isayeva, G. A.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Alekberov, R. I.</au><au>Isayev, A. I.</au><au>Mekhtiyeva, S. I.</au><au>Isayeva, G. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Role of samarium atoms in the formation of the structure of As-Se-S chalcogenide vitreous semiconductors</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2014-06-01</date><risdate>2014</risdate><volume>48</volume><issue>6</issue><spage>796</spage><epage>799</epage><pages>796-799</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The Raman spectra of films of samarium-doped As-Se-S three-component chalcogenide vitreous semiconductors are studied. It is shown that the spectra are constituted by four bands in the frequency ranges 10–100, 195–290, 290–404, and 420–507 cm
−1
, which strongly vary with doping. The structural units in As-Se-S and their possible changes upon doping are determined. The results obtained are accounted for by the specific distribution of samarium atoms in the sample and by their chemical activity.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782614060025</doi><tpages>4</tpages></addata></record> |
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| subjects | Low-Dimensional Systems Magnetic Materials Magnetism Physics Physics and Astronomy Quantum Phenomena Raman spectroscopy Rare earth metals Semiconductor Structures Semiconductors |
| title | Role of samarium atoms in the formation of the structure of As-Se-S chalcogenide vitreous semiconductors |
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