Influence of the nonequilibrium-carrier concentration on the hall voltage in a p-type semiconductor

The dependence of the Hall voltage on the external electric field in a p -type semiconductor sample placed in a weak magnetic field is investigated. It is shown that the Hall voltage depends nonlinearly on the electric field in a sample whose thickness is comparable to the diffusion length and surfa...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2014-06, Vol.48 (6), p.772-775
1. Verfasser:	Konin, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Low-Dimensional Systems Magnetic fields Magnetic Materials Magnetism Physics Physics and Astronomy Quantum Phenomena Semiconductor Structures Semiconductors
Online-Zugang:	Volltext
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