Photosensitivity of structures with quantum wells under normal radiation incidence
The results of investigations of photosensitivity are presented for normal radiation incidence to structures with quantum wells grown by molecular-beam and gas-phase epitaxy methods but having nominally identical construction. It is established that the samples grown by gas-phase epitaxy have higher...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2014-02, Vol.48 (2), p.212-215 |
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Sprache: | eng |
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