Effect of ion doping on the dislocation-related photoluminescence in [Si.sup.+]-implanted silicon

The study is concerned with the effect of the additional implantation of Si samples with [C.sup.+], [O.sup.+], [B.sup.+], [P.sup.+], and [Ge.sup.+] impurity ions followed by annealing at 800°C on the behavior of the dislocation photoluminescence line D1, induced in the samples by implantation with [...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2014-02, Vol.48 (2), p.199
Hauptverfasser:	Mikhaylov, A.N, Belov, A.I, Korolev, D.S, Timofeeva, A.O, Vasiliev, V.K, Shushunov, A.N, Bobrov, A.I, Pavlov, D.A, Tetelbaum, D.I, Shek, E.I
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Photoluminescence Silicon
Online-Zugang:	Volltext
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