Impact ionization of excitons in single-crystal silicon and its effect on the exciton concentration and luminescence near the fundamental absorption edge

The effect of impact ionization of excitons by free charge carriers on the exciton concentration in single-crystal silicon ( c -Si) at room temperature and at a high injection level is investigated. At sufficiently high concentrations of free electrons ( n ), the impact ionization dominates over the...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2014-02, Vol.48 (2), p.178-183
1. Verfasser:	Emel’yanov, A. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical properties Comparative analysis Electrons Interaction with Radiation Ionization Magnetic Materials Magnetism Physics Physics and Astronomy Semiconductors Silicon Spectroscopy
Online-Zugang:	Volltext
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