Study of the electrical properties of individual (Ga,Mn)As nanowires
Arrays of (Ga, Mn)As nanowire crystals are synthesized by molecular-beam epitaxy. Electronbeam lithography made possible the fabrication of electric contacts to individual nanowires. The influence of the annealing temperature on the properties of the contacts is studied. The optical annealing temper...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2014-03, Vol.48 (3), p.344-349 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 48 |
| creator | Bouravleuv, A. D. Sibirev, N. V. Gilstein, E. P. Brunkov, P. N. Mukhin, I. S. Tchernycheva, M. Khrebtov, A. I. Samsonenko, Yu. B. Cirlin, G. E. |
| description | Arrays of (Ga, Mn)As nanowire crystals are synthesized by molecular-beam epitaxy. Electronbeam lithography made possible the fabrication of electric contacts to individual nanowires. The influence of the annealing temperature on the properties of the contacts is studied. The optical annealing temperature is determined to be 160°C. It is found that an increase in the annealing temperature yields structure degradation. From studies of the current-voltage characteristics of the individual nanowire structures, a number of their electrical parameters, such as the resistivity and the mobility of charge carriers are determined. |
| doi_str_mv | 10.1134/S1063782614030075 |
| format | Article |
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From studies of the current-voltage characteristics of the individual nanowire structures, a number of their electrical parameters, such as the resistivity and the mobility of charge carriers are determined.</description><subject>Analysis</subject><subject>Annealing</subject><subject>Electric properties</subject><subject>Epitaxy</subject><subject>Field-effect transistors</subject><subject>Low-Dimensional Systems</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum Phenomena</subject><subject>Semiconductor Structures</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LAzEQxYMoWKsfwNseFdyaSTbJ7rFUrULFQ_W8ZPOnpmyTkuwq_fbuUm-CzGGGefN7MA-ha8AzAFrcrwFzKkrCocAUY8FO0ARwhXNeiOp0nDnNR_0cXaS0xRigZMUEPay7Xh-yYLPu02SmNaqLTsk228ewN7FzJo2i89p9Od0Pws1S3r3623nKvPTh20WTLtGZlW0yV799ij6eHt8Xz_nqbfmymK9yRYnocmUFUIGh4awBSijlRCvCrK6kJoVi2pKmIoRJCkxZXpLGmqrikgkhCJCSTtHs6LuRramdt6GLUg2lzc6p4I11w35OBSkYBkYHAI6AiiGlaGy9j24n46EGXI-51X9yGxhyZNJw6zcm1tvQRz_89Q_0A5exbYA</recordid><startdate>20140301</startdate><enddate>20140301</enddate><creator>Bouravleuv, A. 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E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of the electrical properties of individual (Ga,Mn)As nanowires</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2014-03-01</date><risdate>2014</risdate><volume>48</volume><issue>3</issue><spage>344</spage><epage>349</epage><pages>344-349</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>Arrays of (Ga, Mn)As nanowire crystals are synthesized by molecular-beam epitaxy. Electronbeam lithography made possible the fabrication of electric contacts to individual nanowires. The influence of the annealing temperature on the properties of the contacts is studied. The optical annealing temperature is determined to be 160°C. It is found that an increase in the annealing temperature yields structure degradation. 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| ispartof | Semiconductors (Woodbury, N.Y.), 2014-03, Vol.48 (3), p.344-349 |
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| source | SpringerLink Journals |
| subjects | Analysis Annealing Electric properties Epitaxy Field-effect transistors Low-Dimensional Systems Magnetic Materials Magnetism Physics Physics and Astronomy Quantum Phenomena Semiconductor Structures |
| title | Study of the electrical properties of individual (Ga,Mn)As nanowires |
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