Deposition of GaN Layers with a lowered dislocation density by molecular-beam epitaxy

The deposition of a multilayer buffer layer that includes a high-temperature AlN layer grown at a temperature above 1100°C has made it possible to reduce the dislocation density in a GaN layer by 1.5–2 orders of magnitude to values in the range from 9 × 10 8 to 1 × 10 9 cm −2 , compared with the cas...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2012-11, Vol.46 (11), p.1429-1431
Hauptverfasser:	Alexeev, A. N., Krasovitsky, D. M., Petrov, S. I., Chaly, V. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	2012 Aluminum compounds Epitaxy Liquors Magnetic Materials Magnetism March 12–16 Nizhni Novgorod Physics Physics and Astronomy Specific gravity Toy industry XVI Symposium “Nanophysics and Nanoelectronics”
Online-Zugang:	Volltext
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