Deposition of GaN Layers with a lowered dislocation density by molecular-beam epitaxy

The deposition of a multilayer buffer layer that includes a high-temperature AlN layer grown at a temperature above 1100°C has made it possible to reduce the dislocation density in a GaN layer by 1.5–2 orders of magnitude to values in the range from 9 × 10 8 to 1 × 10 9 cm −2 , compared with the cas...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2012-11, Vol.46 (11), p.1429-1431
Hauptverfasser:	Alexeev, A. N., Krasovitsky, D. M., Petrov, S. I., Chaly, V. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	2012 Aluminum compounds Epitaxy Liquors Magnetic Materials Magnetism March 12–16 Nizhni Novgorod Physics Physics and Astronomy Specific gravity Toy industry XVI Symposium “Nanophysics and Nanoelectronics”
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creator	Alexeev, A. N. Krasovitsky, D. M. Petrov, S. I. Chaly, V. P.
description	The deposition of a multilayer buffer layer that includes a high-temperature AlN layer grown at a temperature above 1100°C has made it possible to reduce the dislocation density in a GaN layer by 1.5–2 orders of magnitude to values in the range from 9 × 10 8 to 1 × 10 9 cm −2 , compared with the case of growth on a thin low-temperature AlN nucleation layer. The decrease in the dislocation density causes a substantial increase in the electron mobility in the GaN layers to 600–650 cm 2 V −1 s −1 , which is in agreement with the results of calculations and is indicative of the high crystalline perfection of the layers.
doi_str_mv	10.1134/S1063782612110024
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subjects	2012 Aluminum compounds Epitaxy Liquors Magnetic Materials Magnetism March 12–16 Nizhni Novgorod Physics Physics and Astronomy Specific gravity Toy industry XVI Symposium “Nanophysics and Nanoelectronics”
title	Deposition of GaN Layers with a lowered dislocation density by molecular-beam epitaxy
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