Fabrication and properties of GaAsSb/GaAs heterostructures doped with a magnetic impurity

Structures made up of a GaAsSb/GaAs quantum well (QW) and δ-layers of manganese and carbon in the GaAs cap layer have been grown and studied for the first time. The resulting heteronanostructures have good crystal perfection, which is confirmed by X-ray diffraction analysis and photoluminescence stu...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2012-12, Vol.46 (12), p.1493-1496
Hauptverfasser:	Zvonkov, B. N., Vikhrova, O. V., Danilov, Yu. A., Drozdov, Yu. N., Drozdov, M. N., Kalent’eva, I. L., Kudrin, A. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	2012 Analysis Criminal investigation Diffraction Gallium arsenide Magnetic Materials Magnetism March 12–16 Mass spectrometry Nizhni Novgorod Photoluminescence Physics Physics and Astronomy Quantum wells X-rays XVI Symposium “Nanophysics and Nanoelectronics”
Online-Zugang:	Volltext
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